Comparison of the structures of evaporated and ion-implanted amorphous silicon samples (original) (raw)

Amorphous-silicon devices start to shape up

Lewis Holmes

Microelectronics Reliability, 1983

View PDFchevron_right

Atomistic features of the amorphous–crystal interface in silicon

Efthimios Kaxiras

1998

View PDFchevron_right

Robustness of amorphous silicon during the initial lithiation/delithiation cycle

Ill Ryu

Journal of Power Sources, 2014

View PDFchevron_right

Unusual atomic arrangements in amorphous silicon

Sándor Kugler

Solid State Communications, 2003

View PDFchevron_right

Process development of amorphous silicon/crystalline silicon solar cells

Giulio Sinno

Solar Energy Materials and Solar Cells, 1997

View PDFchevron_right

Device-size atomistic models of amorphous silicon

G. Barkema

2001

View PDFchevron_right

XANES study of structural disorder in amorphous silicon

Pierre Lagarde

1990

View PDFchevron_right

Properties of amorphous silicon produced by ion implantation: Thermal annealing

graham hubler

Nuclear Instruments and Methods in Physics Research, 1983

View PDFchevron_right

Role of defects in the electronic properties of amorphous/crystalline Si interface

Maria Peressi

2001

View PDFchevron_right

Electronically designed amorphous carbon and silicon

Parthapratim Biswas

physica status solidi (a), 2016

View PDFchevron_right

Microstructural properties of amorphous silicon alloys deposited by dc magnetron source

Nikola Radic

Vacuum, 1995

View PDFchevron_right

On the hydrogen in hydrogen-containing amorphous silicon

eddy hansen

Journal of Non-Crystalline Solids, 2007

View PDFchevron_right

Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: AnAb InitioStudy

Parthapratim Biswas

Physical Review Applied, 2017

View PDFchevron_right

Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

Dimitris Tsoukalas

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999

View PDFchevron_right

Small bond angles in amorphous silicon: are they a new type of defect?

Sándor Kugler

Journal of Non-Crystalline Solids, 2004

View PDFchevron_right

In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers

Marcel Verheijen

Journal of Applied Physics, 2012

View PDFchevron_right

A very simple method for profiling the ion-implanted Si-surface

Minh Luân Phạm

Physica Status Solidi (a), 1978

View PDFchevron_right

The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

Ilkka Tittonen

Nanotechnology, 2010

View PDFchevron_right

Nickel induced crystallization of amorphous silicon thin films

Nicolás Budini

Journal of Applied Physics, 1998

View PDFchevron_right

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

Mark Breese

Applied Physics Letters, 2014

View PDFchevron_right

Sulfur point defects in crystalline and amorphous silicon

Martin Bazant

Physical Review B, 2004

View PDFchevron_right

Activation volume of silicon diffusion in San Carlos olivine

Paul Raterron

Geophysical Research Letters, 1997

View PDFchevron_right

Injection of point defects during annealing of low energy As implanted silicon

Dimitris Tsoukalas

Materials Science and Engineering: B, 2005

View PDFchevron_right

Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors

Jeremy Davis

Frontiers in Physics, 2020

View PDFchevron_right

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

Nikolay Cherkashin

Materials Science in Semiconductor Processing, 2013

View PDFchevron_right

Amorphous silicon solar cells on anodically oxidized aluminum substrate

Somayeh Shams

Solar Cells, 1989

View PDFchevron_right

Atomistic simulations of elastic and plastic properties in amorphous silicon

Tristan Albaret

EPL (Europhysics Letters), 2009

View PDFchevron_right

Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

A. Jaballah

physica status solidi (c), 2005

View PDFchevron_right

Highly 28mathrmSi{ }^{28} \mathrm{Si}28mathrmSi Enriched Silicon by Localised Focused Ion Beam Implantation

Maddison Coke

arXiv (Cornell University), 2023

View PDFchevron_right

Onset of blistering in hydrogen-implanted silicon

Ben Lee

Applied Physics Letters, 1999

View PDFchevron_right

On the nanostructure of pure amorphous silicon

Rahma Puspita Sari

Applied Physics Letters, 1995

View PDFchevron_right

Thermal conductivity of hydrogenated amorphous silicon

N. Attaf

Solid State Communications, 2001

View PDFchevron_right

High resolution TEM analysis of focused ion beam amorphized regions in single crystal silicon—A complementary materials analysis of the teardrop method

Amir Raveh

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017

View PDFchevron_right

Hydrogenated amorphous silicon films deposited by electron cyclotron resonance chemical vapor deposition at room temperature with different radio frequency chuck powers

Audrey Roberto Silva

Thin Solid Films, 2019

View PDFchevron_right

Some new results in porous silicon

Adarsh Kumar

Bulletin of Materials Science, 1994

View PDFchevron_right