Local electrical characterization of laser-recorded phase-change marks on amorphous Ge_2Sb_2Te_5 thin films
Masud Mansuripur
Optics Express, 2011
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Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Faruk Dirisaglik
Cornell University - arXiv, 2022
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Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation
Faruk Dirisaglik
Applied Physics Letters, 2020
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Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
M. Putero
Applied Physics Letters, 2016
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Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
Geoffrey W Burr
Journal of Applied Physics, 2011
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Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application
Sergey Kozyukhin
AIP Conference Proceedings, 2016
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Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
karthick perumal
Scientific reports, 2016
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Polarity-Dependent Resistance Switching In GeSbTe Phase-Change Thin Films: The Importance of Excess Sb In Filament Formation
Andrew Pauza
Applied Physics …, 2009
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Comments on the electronic transport mechanisms in the crystalline state of Ge—Sb—Te phase-change materials
Ruben Freitas
Physics of Complex Systems, 2021
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Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; as-deposited amorphous, crystalline, and laser-reamorphized
Marcus Baer
Applied Physics Letters, 2014
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Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
Shuchang Wang
Applied Surface Science, 2006
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Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices
Helena Silva
Journal of Applied Physics
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A layered Ge2Sb2Te5phase change material
Jhonatan Rodriguez-Pereira
Nanoscale, 2020
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Characterization of phase change memory materials using phase change bridge devices
Geoffrey W Burr
Journal of Applied Physics, 2009
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Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application
Jose Gervacio
Crystallization - Science and Technology, 2012
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Reversible Resistance Switching In Ge-Sb-Te Thin Films Without Amorphous-Crystalline Phase-Change
Andrew Pauza
epcos.org
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Switching and memory effects in partly crystallized amorphous Ge2Sb2Te5 films in a current controlled mode
Nurlan Almassov
Journal of Non-Crystalline Solids, 2012
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Solution-phase deposition and nanopatterning of GeSbSe phase-change materials
S. Raoux
Nature Materials, 2007
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Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
Hessel Sprey
2011 IEEE International Interconnect Technology Conference, 2011
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A microscopic model for resistance drift in amorphous Ge2Sb2Te5
Hideki Horii
Current Applied Physics, 2011
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Investigation of Phase Transformations in Ge4Sb4Te5 film using Transmission Electron Microscopy
Manish Kumar Singh
Microscopy and Microanalysis, 2021
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High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift
Faruk Dirisaglik
Nanoscale, 2015
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Insight into the Growth and Control of Single-Crystal Layers of Ge–Sb–Te Phase-Change Material
karthick perumal
Crystal Growth & Design, 2011
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Polarity-Dependent Reversible Resistance Switching In GeSbTe Phase-Change Thin Films
Andrew Pauza
Applied Physics …, 2007
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Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application
Chung-Che Huang
Advances in OptoElectronics, 2012
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Investigation of the optical and electronic properties of Ge[sub 2]Sb[sub 2]Te[sub 5] phase change material in its amorphous, cubic, and hexagonal phases
Octavian Buiu
Journal of Applied Physics, 2005
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Microscopic studies of fast phase transformations in GeSbTe films
Walter Njoroge
MRS Proceedings, 2001
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One-Dimensional Thickness Scaling Study of Phase Change Material (hboxGe2hboxSb2hboxTe5)(\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5})(hboxGe2hboxSb2hboxTe5) Using a Pseudo 3-Terminal Device
Byoung Jae Bae
IEEE Transactions on Electron Devices, 2011
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Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
Geoffrey W Burr
2006 International Electron Devices Meeting, 2006
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