Chemical state and atomic structure of Ge[sub 2]Sb[sub 2]Te[sub 5] system for nonvolatile phase-change random access memory
Se Ahn Song
Journal of Applied Physics, 2008
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Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
karthick perumal
Scientific reports, 2016
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Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM
Seung-Joon Jeon
NPG Asia Materials, 2015
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Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Faruk Dirisaglik
Cornell University - arXiv, 2022
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Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application
Jose Gervacio
Crystallization - Science and Technology, 2012
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Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
Archy gu
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Reversible Resistance Switching In Ge-Sb-Te Thin Films Without Amorphous-Crystalline Phase-Change
Andrew Pauza
epcos.org
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Ultra-low Energy Phase Change Memory with Improved Thermal Stability by Tailoring the Local Structure through Ag Doping
Kyung Hee University
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Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model
Thierry Tsafack, Enrico Piccinini, Massimo Rudan
2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009
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Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
Hessel Sprey
2011 IEEE International Interconnect Technology Conference, 2011
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Evidence for correlated structural and electrical changes in a Ge 2 Sb 2 Te 5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing
Damien Deleruyelle
Journal of Applied Crystallography, 2011
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Effect of doping on the crystallization kinetics of phase change memory materials on the basis of Ge–Sb–Te system
Sergey Kozyukhin
Journal of Thermal Analysis and Calorimetry, 2016
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Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device
DONGSEOK SUH
Physical Review B, 2006
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First-principles thermal transport in amorphous Ge2Sb2Te5 at the nanoscale
Mauro Boero
RSC Advances, 2021
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Multiphonon hopping of carriers on defect clusters in an amorphous Ge-Sb-Se system
Dr. R. M. Mehra
Physical Review B, 1991
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Investigation of the optical and electronic properties of Ge[sub 2]Sb[sub 2]Te[sub 5] phase change material in its amorphous, cubic, and hexagonal phases
Octavian Buiu
Journal of Applied Physics, 2005
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Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
Shuchang Wang
Applied Surface Science, 2006
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Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
Geoffrey W Burr
Journal of Applied Physics, 2011
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Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application
Sergey Kozyukhin
AIP Conference Proceedings, 2016
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Ultrascalability and electron transport properties of ultra-thin film phase change material Ge2Sb2Te5
Aliasghar Shokri
The European Physical Journal B
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Fast and scalable memory characteristics of Ge-doped SbTe phase change materials
Suyoun Lee
physica status solidi (b), 2012
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Weak antilocalization and disorder-enhanced electron interactions in annealed films of the phase-change compound GeSb_{2}Te_{4}
Alexander Palevski
Physical Review B, 2012
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Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
M. Putero
Applied Physics Letters, 2016
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Epitaxial phase-change materials
Achim Trampert
physica status solidi (RRL) - Rapid Research Letters, 2012
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Electronic properties of GST for non-volatile memory
Hangbing Lv
Microelectronics Journal, 2006
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A microscopic model for resistance drift in amorphous Ge2Sb2Te5
Hideki Horii
Current Applied Physics, 2011
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High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift
Faruk Dirisaglik
Nanoscale, 2015
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A layered Ge2Sb2Te5phase change material
Jhonatan Rodriguez-Pereira
Nanoscale, 2020
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Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices
Helena Silva
Journal of Applied Physics
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Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST
Geoffrey W Burr
Journal of The Electrochemical Society, 2011
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Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials
Gert ten Brink
Applied Physics Letters, 2012
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Mapping the band structure of GeSbTe phase change alloys around the Fermi level
Markus Morgenstern
Communications Physics, 2018
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Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory
S. Raoux
2008 IEEE International Electron Devices Meeting, 2008
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Hybrid density functional study of electronic and optical properties of phase change memory material: Ge[sub 2]Sb[sub 2]Te[sub 5]
Muhammad Ramzan
Journal of Applied Physics, 2013
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