Reversible Resistance Switching In Ge-Sb-Te Thin Films Without Amorphous-Crystalline Phase-Change (original) (raw)

Polarity-Dependent Reversible Resistance Switching In Ge–Sb–Te Phase-Change Thin Films

Andrew Pauza

Applied Physics …, 2007

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Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change

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Polarity-Dependent Resistance Switching In GeSbTe Phase-Change Thin Films: The Importance of Excess Sb In Filament Formation

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Microscopic studies of fast phase transformations in GeSbTe films

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Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

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Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivative

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Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; as-deposited amorphous, crystalline, and laser-reamorphized

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