In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy (original) (raw)

Strain-relief mechanisms and nature of misfit dislocations in GaAs/Si heterostructures

J. Narayan

Materials Science and Engineering: A, 1989

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Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

Luisa Gonzalez

Applied Physics Letters, 2002

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Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates

Yu-Hwa Lo

Applied Physics Letters, 1988

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How to Avoid Plastic Deformation in GaAs Wafers during Molecular Beam Epitaxial Growth

Peter Moeck

Crystal Research and Technology, 2000

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Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures

Karen L Kavanagh

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Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

Linn W. Hobbs

Journal of Applied Physics, 1988

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Misfit dislocations in GaAsN/GaAs interface

Patrick McNally

Journal of Materials Science-Materials in Electronics, 2003

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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

quang luc

Applied Physics Letters, 2016

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Strain relaxation in graded composition In[sub x]Ga[sub 1−x]As/GaAs buffer layers

Claudio Ferrari

Journal of Applied Physics, 1999

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Studies of lattice mismatch and threading dislocations in GaAs/Si grown by MBE

Mehmet Kaya

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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

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Journal of Crystal Growth, 2003

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Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Claudiu V Falub

Applied Physics Letters, 2014

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Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

Olga Markowska

Optical and Quantum Electronics

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Formation of misfit dislocations in strained-layer GaAs/InxGa1−xAs/GaAs heterostructures during postfabrication thermal processing

Nicholas Braithwaite

Journal of Applied Physics, 2003

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The characterization of misfit dislocations at {100} heterojunctions in III–V compound semiconductors

Bruno De Cooman

Acta Metallurgica, 1989

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Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD≪1000cm−2)

Georg Muller

Journal of Crystal Growth, 1999

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Introduction of misfit dislocations into strained-layer GaAs/InxGa1–xAs/GaAs heterostructures by mechanical bending

Adrian Hopgood

Journal of Applied Physics, 2020

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Partial strain relaxation in (In, Ga) As epilayers on GaAs by means of twin formation

Peter Moeck

Journal of crystal …, 1999

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Dislocation multiplication in GaAs : inhibition by doping

Nelly Burle

Revue de Physique Appliquée, 1989

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Dislocations in GaAs grown by ALMBE on (001) Si

Anna Vila, J. Morante

Materials Letters, 1991

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Prediction of dislocation generation during Bridgman growth of GaAs crystals

Arnon Chait

Journal of Crystal Growth, 1992

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Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si

A. Mazuelas

Applied Physics A Solids and Surfaces, 1991

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Dislocations in medium to highly mismatched III–V epitaxial heterostructures

Laura Lazzarini

Journal of Crystal Growth, 1993

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Mechanical properties of undoped GaAs. Part I: Yield stress measurements

Pirouz Pirouz

Acta Materialia, 2007

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Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

Louis Guido

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Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy

Itaru Kamiya

Journal of Crystal Growth, 2011

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Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A

Henry Weinberg

Surface Science, 2003

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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers

narciso gambacorti

1994

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Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Z. Zytkiewicz, E. Dynowska

physica status solidi (a), 1999

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

P. Gladkov

Applied Surface Science, 2014

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