In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy (original) (raw)
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J. Narayan
Materials Science and Engineering: A, 1989
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Applied Physics Letters, 2002
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Applied Physics Letters, 1988
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Crystal Research and Technology, 2000
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Linn W. Hobbs
Journal of Applied Physics, 1988
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Journal of Materials Science-Materials in Electronics, 2003
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Applied Physics Letters, 2016
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Journal of Applied Physics, 1999
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Optical and Quantum Electronics
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Journal of Applied Physics, 2003
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Bruno De Cooman
Acta Metallurgica, 1989
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Georg Muller
Journal of Crystal Growth, 1999
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Introduction of misfit dislocations into strained-layer GaAs/InxGa1–xAs/GaAs heterostructures by mechanical bending
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Journal of crystal …, 1999
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Revue de Physique Appliquée, 1989
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Dislocations in GaAs grown by ALMBE on (001) Si
Anna Vila, J. Morante
Materials Letters, 1991
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Arnon Chait
Journal of Crystal Growth, 1992
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Acta Materialia, 2007
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Surface Science, 2003
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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers
narciso gambacorti
1994
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Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers
Z. Zytkiewicz, E. Dynowska
physica status solidi (a), 1999
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Applied Surface Science, 2014
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