Leakage current of hadron irradiated silicon detectors – material dependence (original) (raw)

1999, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Free PDF

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also stu...

Free PDF

Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy

IEEE Transactions on Nuclear Science, 1997

ABSTRACT Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors. In conjunction with deep level parameters obtained from an I-DLTS study and changes observed in the effective doping concentration and in the leakage current after exposure to high doses of 60Co-gammas, new insight is gained into the radiation induced device deterioration and the corresponding annealing behavior

Free PDF