The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter
Sylvain Bollaert
Solid-State Electronics, 2000
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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1−xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications
Kartik Chandra Sahoo
IEEE ELECTRON DEVICE LETTERS, 2010
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The indium content in metamorphic In x Al 1−x As/ In x Ga 1−x As HEMTs on GaAs substrate: a new structure parameter
Mohammed Zaknoune
Solid-state Electronics, 2000
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Enhancement-mode Al0. 66In0. 34As/Ga0. 67 In0. 33As metamorphic HEMT, modeling and measurements
C. Gaquiere
Electron Devices, …, 2001
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InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance
Mohammed Zaknoune
Japanese Journal of Applied Physics, 1999
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Enhancement-mode Al/sub 0.66/In/sub 0.34/As/Ga/sub 0.67/In/sub 0.33/As metamorphic HEMT, modeling and measurements
Michel Rousseau
IEEE Transactions on Electron Devices, 2001
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Characterization of InP-based pseudomorphic HEMT with T-gate
shashank dubey
Microsystem Technologies, 2019
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Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates
Somin Kim
Solid-State Electronics, 2006
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Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
Mohamed Arafa
IEEE Transactions on Electron Devices, 1998
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Ultralow-noise W-band pseudomorphic InGaAs HEMT's
Tiện Trịnh
IEEE Electron Device Letters, 1990
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Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels
GEORGE PAPAIOANNOU
Superlattices and Microstructures, 1990
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Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation
Hidetoshi Matsumoto
IEEE Transactions on Electron Devices, 1999
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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
T. Kazior
IEEE Electron Device Letters, 2000
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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications
Edward Chang
IEEE Electron Device Letters, 2000
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Design and growth investigations of strained In/sub x/Ga/sub 1-x/As/InAlAs/InP heterostructures for high electron mobility transistor application
M. Gendry
IEEE Transactions on Electron Devices, 1996
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In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD
Kei Lau
physica status solidi (a), 2012
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Numerical analysis of device performance of metamorphic In/sub y/Al/sub 1-y/As/In/sub x/Ga/sub 1-x/As (0.3≤x≤0.6) HEMTs on GaAs substrate
Sylvain Bollaert, Henri Happy
IEEE Transactions on Electron Devices, 1998
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In/sub 0.52/Al/sub0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT's on InP substrates
Jen-Inn Chyi
International Electron Devices and Materials Symposium
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Optimization of layer structure for InGaAs channel pseudomorphic HEMTs
Eleftherios Skouras
Journal of Crystal Growth, 1999
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DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application
International Journal of Electrical and Computer Engineering (IJECE)
International Journal of Electrical and Computer Engineering (IJECE), 2020
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60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
Taewoo Kim
2010
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A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance
Hiroshi Takahashi
IEEE Electron Device Letters, 2000
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In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz f max
Simone Suran Brunelli
IEEE Journal of the Electron Devices Society, 2020
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Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs
Journal of Electrical and Computer Engineering Innovations
2019
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MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
Kei Lau
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DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)
Muniba Ahmad
2012
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Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications
Louis Pleasant, Kuanghann Duh
IEEE Transactions on Electron Devices, 2000
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Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications
Mohamed Arafa
IEEE Transactions on Electron Devices, 1998
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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm gmg_{m}gm and 500-GHz fTf_{T}fT
Takatomo ENOKI
IEEE Transactions on Electron Devices, 2007
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Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs
Muhamad Reggi
… (ASDAM), 2010 8th …, 2010
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0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor
aaditya mahajan
IEEE Electron Device Letters, 1997
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A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance hboxIn0.52hboxAl0.48hboxAshbox/hboxIn0.53hboxGa0.47hboxAs\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}hboxIn0.52hboxAl0.48hboxAshbox/hboxIn0.53hboxGa0.47hboxAs p-HEMTs
Taewoo Kim
IEEE Transactions on Electron Devices, 2008
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Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability
SANDEEP AGGARWAL
2004
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