Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20$^0$C and +20$^0$C (original) (raw)

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Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C Cover Page

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Proton irradiation of silicon detectors with different resistivities Cover Page

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Results of irradiation tests on standard planar silicon detectors with 7– protons Cover Page

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Electrical characteristics and charge collection efficiency of silicon detectors irradiated with very high neutron and proton fluences Cover Page

Czochralski silicon detectors irradiated with and 10MeV protons

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of

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Czochralski silicon detectors irradiated with and 10MeV protons Cover Page

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New Operation Scenarios for Severely Irradiated Silicon Detectors Cover Page

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Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures Cover Page

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Characterization of thick epitaxial silicon detectors from different producers after proton irradiation Cover Page

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Scanning of irradiated silicon detectors using alpha particles and low-energy protons Cover Page

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Study of charge transport in non-irradiated and irradiated silicon detectors Cover Page