Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20$^0$C and +20$^0$C (original) (raw)
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Czochralski silicon detectors irradiated with and 10MeV protons
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of
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