Large signal design method of distributed power amplifiers applied to a 2–18-GHz GaAs chip exhibiting high power density performances (original) (raw)
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2006 International RF and Microwave Conference, 2006
This paper will describe the analysis of distributed power amplifier using discrete RF MOSFET devices. Large signal design is discussed where non-uniform of drain line's characteristic impedance is employed to enhance the output power and efficiency performance. The amplifier demonstrates 1 Watt output power with 13dB associated gain and 26% of PAE over 100MHz to 600MHz frequency band.
A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications
International Journal of Electrical and Computer Engineering (IJECE), 2018
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of-38dB and an output return loss of-33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm 2. Keyword: Advanced design system Field-effect transistor (FET) Gallium arsenide (GaAs) Matching network (MN) Microstrip technology Power amplifier (PA)
2010 18th Iranian Conference on Electrical Engineering, 2010
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2005 European Microwave Conference, 2005
This paper reports on the design of a cascode GaN HEMT distributed power amplifier demonstrating significant improvement of the best power performances reported to date. The active device is a 8x50µm AlGaN/GaN HEMT grown on siSiC. The distributed power amplifier integrates 4 cascode cells capacitively coupled to the gate line for power optimization. The active part made of the 4 cascode cells is implanted on a GaN-based wafer while the distributed passive part made of the interconnection lines is implanted on an AlN substrate. Finally, the GaN-based wafer integrating the active part is flip-chipped onto the AlN substrate via electrical and mechanical bumps. The flip-chip integrated circuit demonstrates a mean gain of 10dB and input/output matching lower than -10dB over the 4-18GHz bandwidth. At an input power of 29dBm (1db comp.), power simulations exhibit a mean output power of 37.6dBm with a standard deviation of 0.3dB, a power gain of 8.6dB and 16% of PAE over the band. At an input power of 31dBm (2dB comp.), the distributed amplifier achieves a mean output power of 38.6dBm, a power gain of 7.6dB and 18% of PAE.
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International Journal of Innovative Research in Science, Engineering and Technology, 2018
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IET Circuits, Devices & Systems, 2009
This study describes the design and performance of a discrete ultra wideband GaN HEMT distributed power amplifier (DPA) with over 5 W (37 dBm) output power and a PAE exceeding 27% in the 0.02-3 GHz frequency range. The implemented DPA design is comprised of three discrete GaN HEMT devices. Its performance was enhanced using tapered drain lines and non-uniform gate capacitive coupling. The design methodology is based on both small and large signal analysis using harmonic balance technique, and their associated predicted and experimental results are discussed here in detail.
A 3.5 GHz packaged medium power amplifier using GaAs PHEMT
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100MHz-650MHz, 1 Watt Distributed Power Amplifier with Discrete MOSFET devices
TENCON 2006 - 2006 IEEE Region 10 Conference, 2006
This paper will describe the design of a discrete MOSFETs distributed power amplifier with 1 watt output power in the 100MHz-650MHz frequency range. Miller theorem and staggering technique are discussed to further increase the bandwidth and improve the stability of the amplifier. Experimental and simulation results of such a structure are discussed.