Damage profiles of MeV implants of Ga and Si in silicon (original) (raw)

Range distributions of MeV implants in silicon II

David Ingram

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987

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Ion-Implantation of Silicon in Gallium-Arsenide - Damage and Annealing Characterizations

R. Nipoti

Nuclear Instruments & Methods in Physics Research, 1983

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Damage profiles in as-implanted silicon: fluence dependence

R. Nipoti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996

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2 MeV Si ion implantation damage in relaxed Si1−xGex

Cormac O'Raifeartaigh

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1996

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MeV ion implantation induced damage in relaxed Si< equation>< sub> 1-x< font face='verdana'> Ge< sub> x

Cormac O'Raifeartaigh

1997

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Displacement Damage and Dose Enhancement in Gallium Arsenide and Silicon

John Garth

IEEE Transactions on Nuclear Science, 1985

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Molecular dynamics characterization of as-implanted damage in silicon

Lourdes Pelaz

Materials Science and Engineering: B, 2005

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Damage evolution in low-energy ion implanted silicon

Martin Chicoine

Physical Review B, 2007

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New Insight into Damage-Related Phenomena in Si Implanted Under Extreme Conditions

Bent Nielsen

MRS Proceedings, 1995

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A detailed physical model for ion implant induced damage in silicon

Borna Obradovic

IEEE Transactions on Electron Devices, 1998

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Implanted damage evolution in sequential annealed silicon

Octavian Buiu

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

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Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

Nicole Herbots

MRS Proceedings, 1992

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Atomistic simulation of damage accumulation and amorphization in Ge

Francis L Benistant, Jose Gomez-Selles

Journal of Applied Physics, 2015

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Comprehensive model of damage accumulation in silicon

Pedro Castrillo

Journal of Applied Physics, 2008

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Defect evolution of low energy, amorphizing germanium implants in silicon

Andres Gutierrez

Journal of Applied Physics, 2003

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MeV, self-ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior

John Budai

Journal of Applied Physics, 1990

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Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si

P. Zalm

Radiation Effects and Defects in Solids, 2009

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Damage formation in Ge during Ar+ and He+ implantation at 15K

F. Auret, Werner Wesch, Jackie Nel

Physica B: Condensed Matter, 2009

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Electrical measurement of the lattice damage induced by -particle implantation in silicon

Santolo Daliento

Vacuum, 2005

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Ion implantation induced damage in relaxed Si/sub 1-x/Ge/sub x/

Cormac O'Raifeartaigh

Proceedings of 11th International Conference on Ion Implantation Technology

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RBS-channeling determination of damage profiles in fully relaxed Si 0.76Ge 0.24 implanted with 2 MeV Si ions

Marco Bianconi

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1997

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Depth profile characterization of low-energy B+- and Ge+-ion-implanted Si

Iordan Karmakov

2003

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Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

Nicole Herbots

Journal of Materials Research, 1993

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Damage production in GaAs during MeV ion implantation

Werner Wesch

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996

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Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon

Andres Gutierrez

MRS Proceedings, 2001

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