Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates (original) (raw)

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Frederik E . Leys

Journal of The Electrochemical Society, 2008

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Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

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Applied Physics Letters, 2008

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JG Ley

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Alice Boussagol

Materials Science in Semiconductor Processing, 2006

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Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure

Ashok Mahajan

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High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization

Thanh Huong Phung

2008 IEEE International Electron Devices Meeting, 2008

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Interface-Engineered High-Mobility High- $k$ /Ge pMOSFETs With 1-nm Equivalent Oxide Thickness

Thanh Huong Phung

IEEE Transactions on Electron Devices, 2009

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Germanium Based Field-Effect Transistors: Challenges and Opportunities

Mantu Hudait

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Electrical characterization of germanium p-channel MOSFETs

Steven Steen

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Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Ji-Woon Yang

IEEE Electron Device Letters, 2000

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Integration of High-κ Dielectrics on Epitaxial (100),(110) and (111) Germanium for Multifunctional Devices

Deepam Maurya

2013

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Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

Guido Groeseneken

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008

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Integration of Germanium-on-Insulator and Silicon MOSFETs on a Silicon Substrate

Peter Griffin

IEEE Electron Device Letters, 2006

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High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3

G. Thareja

2010 International Electron Devices Meeting, 2010

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Vertical Ge/SiGeSn-based p-channel nano field-effect transistors integrated on Si

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Experimental and theoretical study of Ge surface passivation

Frederik E . Leys

Microelectronic Engineering, 2007

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Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions

Eddy Simoen

Materials Science in Semiconductor Processing, 2006

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High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3

Nishant Nishi B

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Germanium: The Past and Possibly a Future Material for Microelectronics

Frederik E . Leys

ECS Transactions, 2007

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Interface engineering for Ge metal-oxide–semiconductor devices

Sabina Paula

Thin Solid Films, 2007

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Interface characterization of high-k dielectrics on Ge substrates

nur rahim

Materials Science in Semiconductor Processing, 2006

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Incorporation of Ge on High K Dielectric Material for Different Fabrication Technologies (HBT, CMOS) and Their Impact on Electrical Characteristics of the Device

Shayan Khan

Journal of Nanomaterials, 2018

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Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

D. Yang, J. Rafí, Jan Vanhellemont

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Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Prashant Majhi

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Challenges and opportunities in advanced Ge pMOSFETs

R. Loo

Materials Science in Semiconductor Processing, 2012

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Improved Ge Surface Passivation With Ultrathin $ \hbox{SiO}_{X}$ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

Cristiano Krug

IEEE Electron Device Letters, 2007

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Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference

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Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation

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Facile Chemical Solution Deposition of High-Mobility Epitaxial Germanium Films on Silicon

Baoquan Sun

Angewandte Chemie International Edition, 2010

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