Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source (original) (raw)

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

Bouraoui ILAHI

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High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

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IEEE Journal of Selected Topics in Quantum Electronics, 2007

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Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Device Engineering

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IEEE Journal of Selected Topics in Quantum Electronics, 2000

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Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

Kiyoshi Asakawa

IEICE Transactions on Electronics, 2012

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InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging

Dong-ning Wang

IEEE Sensors Journal, 2007

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Multi-section quantum dot superluminescent diodes for spectral shape engineering

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IET Optoelectronics, 2009

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Structural and optical properties of GaAs/AlGaAs superlattice layer on InAs quantum dots

Yonkil Jeong

Journal of Crystal Growth, 2004

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Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs Quantum Dots based p-i-n light emitting diodes

Shouvik Datta

Journal of Physics D: Applied Physics, 2018

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Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode

Minisha Mehta

Physica E-low-dimensional Systems & Nanostructures, 2010

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InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes

Serge Oktyabrsky

MRS Proceedings, 2001

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Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates

Pierre Basmaji

Superlattices and Microstructures, 1997

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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

JinSoo Kim

Journal of Crystal Growth, 2004

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Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots

Oumar Niasse

Research Journal of Applied Sciences, Engineering and Technology, 2013

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InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate

Vitaliy Dorogan

ACS Photonics, 2014

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Integrated tunable quantum dot laser for optical coherence tomography in the 1.7µm wavelength region

Yuqing Jiao

Journal of The Optical Society of America A-optics Image Science and Vision, 2011

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Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs∕GaAs quantum well

Zhe Feng

Journal of Applied Physics, 2007

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Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces

E. Grilli

1997

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Broadband light sources based on InAs/InGaAs metamorphic quantum dots

Federica Cappelluti

Journal of Applied Physics, 2016

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Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices

Hanxuan Li

Physica E: Low-dimensional Systems and Nanostructures, 2001

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Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

Giancarlo Salviati

The European Physical Journal B, 2000

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Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix

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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures

Aditya Patel

Superlattices and Microstructures, 2013

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Tron Arne Nilsen

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 2006

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Optical Imaging of Electrical Carrier Injection into Individual InAs Quantum Dots

Dieter Bimberg

Physical Review Letters, 2010

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Improvement of performance of GaAs solar cells by inserting self-organized InAs/InGaAs quantum dot superlattices

Ridha Mghaieth

Solar Energy Materials and Solar Cells, 2013

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Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices

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physica status solidi (a), 2003

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A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer

Nilanjan Halder

Opto-Electronics Review, 2010

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Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers

Mikhail Maximov

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Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

Nilanjan Halder

Opto-Electronics Review, 2010

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Nano-engineering approaches to self-assembled InAs quantum dot laser medium

V. Tokranov

Journal of Electronic Materials, 2006

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Photoluminescence Intensity Enhancement in Self-assembled InAs Quantum Dots Grown on (3 1 1)B and (1 0 0) GaAs

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Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

Nikolay Bert

Applied Physics Letters, 1999

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In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs

Serge Oktyabrsky

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005

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Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

Daniel Poitras

Optics Letters, 2012

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