Stress analysis of Si 1− x Ge x embedded source/drain junctions (original) (raw)

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Source/Drain Junctions

R. Loo

IEEE Transactions on Electron Devices, 2000

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Stress characterization of device layers and the underlying Si 1− x Ge x virtual substrate with high-resolution micro-Raman spectroscopy

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Local defect-free elastic strain relaxation of Si1-xGex embedded into SiO2

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Materials Science in Semiconductor Processing, 2020

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Impact of Ge Content and Recess Depth on the Leakage Current in Strained {Si}_{1-x}{Ge}_{x}/{Si} Heterojunctions

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IEEE Transactions on Electron Devices, 2011

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Impact of Ge Content and Recess Depth on the Leakage Current in Strained hboxSi1−xhboxGex/hboxSi\hbox{Si}_{1-x}\hbox{Ge}_{x}/\hbox{Si}hboxSi1−xhboxGex/hboxSi Heterojunctions

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IEEE Transactions on Electron Devices, 2011

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The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

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Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature

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Effect of Stresses on Defect Nucleation in Si1−.xGex/Si Heteroepitaxial Systems

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Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

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Applied Physics Letters, 2008

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Kinetics of Si incorporation into a Ge matrix for Si[sub 1−x]Ge[sub x] layers grown by chemical vapor deposition

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Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions

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IEEE Transactions on Electron Devices, 2000

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Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy

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Strain Relaxation in Si1-xGex Thin Films on Si (100) Substrates: Modeling and Comparisons with Experiments

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Effect of carbon on lattice strain and hole mobility in Si 1- x Ge x alloys

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Journal of Materials Science-materials in Electronics, 2002

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Strain relaxation mechanisms and local structural changes in Si 1 − x Ge x alloys

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Physical Review B, 2001

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Composition and strain in thin Si[sub 1−x]Ge[sub x] virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

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Journal of Applied Physics, 2011

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Leakage current study of Si1−xCx embedded source/drain junctions

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Germanium content dependence of the leakage current of recessed SiGe source/drain junctions

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Experimental Analyses on Multiscale Structural and Mechanical Properties of ε-Si/GeSi/C-Si Materials

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Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

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HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006

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Electron and ion beam analysis of composition and strain in Si-x Ge x /Si heterostructures

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Strain relaxation of pseudomorphic Si[sub 1−x]Ge[sub x]∕Si(100) heterostructures after Si[sup +] ion implantation

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Characterization of strain and crystallinity in patterned embedded Silicon Germanium structures

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Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters

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