original ) (raw )Characterization of Ion-implantation in Silicon by using Laser Infrared Photo-Thermal Radiometry (PTR)
Andreas Mandelis
2003
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Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing
Andreas Mandelis
Applied Physics Letters, 1996
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Characterization of oxide layers grown on implanted silicon
Gianluca Franco
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995
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Three-layer photocarrier radiometry model of ion-implanted silicon wafers
Andreas Mandelis
Journal of Applied Physics, 2004
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Structural studies of 20 keV oxygen-implanted silicon
GAURAV GUPTA
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
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Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysis
J. Samitier
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
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Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B+ and P2+ implantation doping
Charalambos C Katsidis
Thin Solid Films, 2009
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Visible Light Emission from Silicon Implanted and Annealed SiO2 Layers
Rita Tonini
Journal of The Electrochemical Society, 1997
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FTIR and RBS study of ion-beam synthesized buried silicon oxide layers
Binaya Kumar Panigrahi
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2008
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Monitoring of ion implantation in Si with carrier plasma waves using infrared photothermal radiometry
Andreas Mandelis
Applied Physics Letters, 1997
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Optical absorption in ion implanted Si films
Madhusoodanan Kottarath
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995
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A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV
Richard Chater
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
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The effects of ion implantation through very thin silicon oxide films
Jean-Jacques Ganem
1994
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Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths
Jerias Batista , Andreas Mandelis
Applied Physics Letters, 2004
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Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers
José Barnoya García , Andreas Mandelis
Journal of Applied Physics, 2004
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Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants
J. Morante
Journal of Applied Physics, 1991
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Photoelectric Measurement Method For Implanted Silicon: A Phenomenological Approach
E. Tsidilkovski
AIP Conference Proceedings, 2006
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Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry
M Pawlak
Infrared Physics & Technology, 2014
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Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation
Andreas Mandelis
Solid-State Electronics, 2005
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The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon
Richard Chater
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
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Depth Profiling of Defects in He Implanted SiO2
Marco Duarte Naia
Acta Physica Polonica A, 2008
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Laser Infrared Photothermal Radiometric and ELYMAT Characterizations of p-Si Wafers Annealed in the Presence of an External Electric Field
Andreas Mandelis
physica status solidi (a), 2001
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Electrical characteristics of ion-implanted laser-annealed silicon
J. Narayan
Radiation Effects, 1980
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Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon
Mihai Anastasescu
Applied Surface Science, 2012
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Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
M. Ya. Valakh
Journal of Luminescence, 1998
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Defects in high-dose oxygen implanted silicon: a TEM study
Jan Vanhellemont
Microelectronics Reliability, 1991
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Dynamics of photo-ionization, heating and crystallization of implanted silicon during laser annealing
Rafael Batalov
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007
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Correlation between structural defects and optical properties in ion-implanted silicon
Werner Wesch
Physica Status Solidi (a), 1981
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Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation
Виктор Мордкович , Kirill Shcherbachev
Crystallography Reports, 2013
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High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP
Justin Fox
Applied Physics Letters, 1990
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