Temperature dependence of Germanium Arsenide field-effect transistors electrical properties (original) (raw)
Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors
Alessandro Grillo
ACS Applied Materials & Interfaces, 2020
View PDFchevron_right
Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
Brice de Jaeger
Applied Physics Letters, 2007
View PDFchevron_right
Germanium Based Field-Effect Transistors: Challenges and Opportunities
Mantu Hudait
Materials, 2014
View PDFchevron_right
Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature
David Leadley
IEEE Transactions on Electron Devices, 2012
View PDFchevron_right
Impact of Band Structure on Phonon-Limited Electron Mobility Behavior of Germanium-on-Insulator Layer with (001) and (111) Surfaces
Jordan Journal of Electrical Engineering (JJEE)
Jordan Journal of Electrical Engineering, 2021
View PDFchevron_right
Gallium Arsenide Transistors: Realization Through a Molecularly Designed Insulator
Andrew Barron
Science, 1994
View PDFchevron_right
500 °C operation of β-Ga2O3 field-effect transistors
Ahmad E Islam
Applied Physics Letters
View PDFchevron_right
Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures
Alois Lugstein
Nano Letters, 2017
View PDFchevron_right
High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap
Wei-e WANG
MRS Proceedings, 2009
View PDFchevron_right
Junctionless nanowire transistor fabricated with high mobility Ge channel
Maryam Shayesteh, Yordan M Georgiev
physica status solidi (RRL) - Rapid Research Letters, 2014
View PDFchevron_right
Low-temperature mobility of holes in Si∕SiGe p-channel heterostructures
PHẠM HAI PHONG
Physical Review B, 2004
View PDFchevron_right
Technique for producing highly planar Si/SiO[sub 0.64]Ge[sub 0.36]/Si metal–oxide–semiconductor field effect transistor channels
Terry Whall
Applied Physics Letters, 1999
View PDFchevron_right
Electron-electron interactions in Al[sub 0.15]Ga[sub 0.85]N∕GaN high electron mobility transistor structures grown on Si substrates
Chi-Te Liang Chi-Te Liang
Applied Physics Letters, 2007
View PDFchevron_right
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
Jan Voves
Superlattices and Microstructures, 2017
View PDFchevron_right
SO-limited mobility in a germanium inversion channel with non-ideal metal gate
Raheel Shah
Thin Solid Films, 2008
View PDFchevron_right
Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Kristel Fobelets
View PDFchevron_right
Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K
Jin Young Jang
Applied Physics Letters, 2013
View PDFchevron_right
Gate-Tunable Electron Transport Phenomena in Al-Ge⟨111⟩-Al Nanowire Heterostructures
Alois Lugstein
Nano Letters, 2015
View PDFchevron_right
High Temperature Operation of Al0.45Ga0.55N/Al0.30Ga0.70N High Electron Mobility Transistors
Carlos Sanchez
ECS Journal of Solid State Science and Technology, 2017
View PDFchevron_right
Negative transconductance in double-gate germanium-on-insulator field effect transistors
Cyrille Royer
Applied Physics Letters, 2007
View PDFchevron_right
Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures
Ayse Erol, O. Donmez
Semiconductor Science and Technology, 2014
View PDFchevron_right
High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures
Eugene Fitzgerald
Journal of Applied Physics, 2012
View PDFchevron_right
Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures
Eugene Fitzgerald
Journal of Applied Physics, 2004
View PDFchevron_right
High performance germanium MOSFETs
Chi Fung Chui
Materials Science and Engineering: B, 2006
View PDFchevron_right
High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
Eugene Fitzgerald
Semiconductor Science and Technology, 2004
View PDFchevron_right
New Flexible Channels for Room Temperature Tunneling Field Effect Transistors
John Jaszczak
View PDFchevron_right
The behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)–Al[sub 0.3]Ga[sub 0.7]N∕AlN∕GaN heterostructures at high temperatures
M. Çakmak
Journal of Applied Physics, 2007
View PDFchevron_right
Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices
Alois Lugstein
ACS Applied Materials & Interfaces, 2021
View PDFchevron_right
The behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures
Deniz Çalışkan
Journal of Applied Physics, 2007
View PDFchevron_right