High-mobility heterostructures based on InAs and InSb: A Monte Carlo study (original) (raw)
Anisotropic transport properties in InAs/AlSb heterostructures
Sylvain Bollaert
Applied Physics Letters, 2010
View PDFchevron_right
Transport studies of MBE-grown InAs/GaSb superlattices
Frank Szmulowicz
Opto-Electronics Review, 2010
View PDFchevron_right
Vertical transport in InAs/GaSb superlattice: role of ionized impurity and interface roughness scatterings
sara safa
arXiv: Materials Science, 2015
View PDFchevron_right
Estimation of influence of lattice strain, bending and doping on the width of energy gap in InAsSb heterostructures
Krzysztof Jóźwikowski
Infrared Physics & Technology, 2019
View PDFchevron_right
Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures
Monodeep Chakraborty
Journal of Applied Physics
View PDFchevron_right
Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures
Asghar Asgari
View PDFchevron_right
Review of electron transport properties in bulk InGaAs and InAs at room temperature
Luca VARANI
Lithuanian Journal of Physics, 2016
View PDFchevron_right
GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
Christophe Coinon
Applied Physics Letters, 2010
View PDFchevron_right
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures
Nerija Zurauskiene
Semiconductors, 2011
View PDFchevron_right
Electron beam induced current in InSb-InAs nanowire type-III heterostructures
F. Beltram
Applied Physics Letters, 2012
View PDFchevron_right
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
Javier Mateos
Journal of Applied Physics, 2010
View PDFchevron_right
Doping Level Dependence of Transport Properties in InAsSb Quantum Wells
Takashi Manago
Physics Procedia, 2010
View PDFchevron_right
High-mobility thin InSb films grown by molecular beam epitaxy
Mukul Debnath
2004
View PDFchevron_right
Optical and structural investigation of InAs/AlSb/GaSb heterostructures
Renato Bisaro
Optical Materials, 2001
View PDFchevron_right
An investigation of the multicarrier transport properties of -doped InSb at high temperatures using a mobility spectrum technique
Joseph Heremans
Semiconductor Science and Technology, 1996
View PDFchevron_right
Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells
Takashi Manago
Journal of Applied Physics, 2015
View PDFchevron_right
Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114, 053712 (2013)]
Frank Szmulowicz
Journal of Applied Physics, 2014
View PDFchevron_right
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
Christophe Coinon
Applied Physics Letters, 2012
View PDFchevron_right
Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs
D. Sztenkiel
physica status solidi (RRL) – Rapid Research Letters, 2020
View PDFchevron_right
Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
A. Christou
Journal of Applied Physics, 1994
View PDFchevron_right
Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer
Jen-inn Chyi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013
View PDFchevron_right
Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures
Asghar Asgari
View PDFchevron_right
Calculation of vertical and horizontal mobilities in InAs/GaSb superlattices
Frank Szmulowicz
Physical Review B, 2011
View PDFchevron_right
Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices
ATIF ALAM KHAN
Nanotechnology, 2019
View PDFchevron_right
Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy
Peter Krogstrup
Advanced Quantum Technologies, 2022
View PDFchevron_right
InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance
Kartik Chandra Sahoo
Japanese Journal of Applied Physics, 1999
View PDFchevron_right
Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures
Mantu Hudait
Journal of Materials Chemistry C
View PDFchevron_right
Effective masses of electrons and heavy holes in InAs, InSb, GaSb, GaAs and some of their ternary compounds
N. Bouarissa
Infrared Physics & Technology, 1999
View PDFchevron_right
Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures
Ilho ahn
Japanese Journal of Applied Physics, 2010
View PDFchevron_right
Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors
David Hoare
Applied Physics Letters, 2007
View PDFchevron_right
Interband phonon assisted tunneling in InAs/GaSb heterostructures
Serge Luryi
Physica B: Condensed Matter, 2002
View PDFchevron_right
Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
Yixin Jin
Journal of Crystal Growth, 1998
View PDFchevron_right
Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance
Wei Fan
Semiconductor Science and Technology, 2008
View PDFchevron_right
Monte Carlo Study of Transport Properties of InN
Vassil Palankovski
Springer Proceedings in Physics, 2008
View PDFchevron_right