Fill Factor Research Papers - Academia.edu (original) (raw)

The aim of this study is to understand the effect of the glass frit chemistry used in thick-film Ag pastes on the electrical performance of the silicon solar cell. The study focuses on the physical behavior of the glass frit during heat treatment as well as the resulting Ag−Si contact interface structure. We observe that the glass frit transition temperature (Tg) and softening characteristics play a critical role in the contact interface structure. The glass transition temperature also significantly influences the contact ohmicity of the thick-film metal grid. A high glass frit transition temperature generally results in thinner glass regions between the Ag bulk of the grid and the Si emitter. It was found that a glass frit (with high Tg) that crystallizes fast during the firing cycle after etching the silicon nitride and Si emitter results in smaller Ag crystallite precipitation at the contact interface. This results in smaller junction leakage current density (Jo2) and higher open-circuit voltage (Voc). Using high Tg pastes (with the appropriate Ag powder size), greater than 0.78 fill factors and >17.4% efficiency were achieved on 4 cm2 untextured single crystal Si solar cells with 100 Ω/sq emitters.

- by Chandra Khadilkar
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- Electronic Materials, Solar Cell, Heat Treatment, Electronic
- by Fuwei Zhuge
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- Nanotechnology, Multidisciplinary, Nanowires, Electrochemical Impedance Spectroscopy

Microlens array (MLA) diffusers for light-emitting diode (LED) backlight systems have been developed. A high fill-factor photoresist mold for the MLA was fabricated using three-dimensional diffuser lithography, and the patterns were transferred to a nickel master mold for UV-curable polymer replication. The fabricated microlens had various paraboloidal profiles, and its aspect ratio was controlled from 1.0 to 2.1. The MLA diffuser showed a batwing radiation pattern with a radiation angle of 150 degrees. The fabricated MLA diffuser may greatly enhance the color-mixing characteristics of LED backlight systems and help reduce the number of LEDs required.

- by Dong Shin
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- Quantum Physics, Nickel, Optical physics, Microstructures
- by Nouredine Sengouga
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- Mechanical Engineering, Renewable Energy, Solar Cell, Numerical Simulation

The process conditions for a high-efficiency and low cost crystalline silicon solar cell were optimized. Novel approaches such as wafer cleaning and saw -damage removal using 0.5wt% of 2,4,6-trichloro-1,3,5-triazine, silicon surface texturing with optimized pyramid heights (∼5μm), and a third step of drive-in after phosphosilicate glass (PSG) removal followed by oxide removal were investigated. A simple method of chemical etching adopted for edge isolation was optimized with edge etching of 5–10μm, without any penetration of chemicals between the stacked wafers. The conversion efficiency, open-circuit voltage, short-circuit current, and fill factor of the cell fabricated with the optimized process were a maximum of 17.12%, 618.4mV, 5.32A, and 77% under AM1.5 conditions, respectively.

- by Lakshminarayan Nariangadu
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- Engineering, Process Optimization, Solar Cell, Physical sciences
- by georg israel
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- Optical Imaging, Chip, Cmos Image Sensor, Sensitivity

In this paper, we report a detailed numerical study of the electron irradiation effect on the photoelectrical parameters of a GaAs based p+-n-n+ solar cell which operates under an AM0 solar spectrum. As a consequence of irradiation different types of defects are created in the semiconductor lattice. These defects introduce energy levels in the gap of the material. The majority of studies dealing with irradiation-induced degradation in solar cells relate it mainly to recombination centres, which are deep levels lying near the mid gap. In the present study, numerical simulation is used to demonstrate that the irradiation-induced degradation is not solely due to recombination centres. Other less deep levels, or traps, play a major role in this degradation. When only recombination centres are taken into account, the short circuit current density (Jsc) is hardly affected while the other cell output parameters such as the open circuit voltage (Voc), the conversion efficiency (η) and the fill factor (FF) are strongly deteriorated. However, if less deep levels or traps are taken into account together with recombination centres, Jsc becomes sensitive to electron irradiation and the other output parameter deteriorations become less sensitive.

- by Nouredine Sengouga
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- Materials Engineering, Condensed Matter Physics, Solar Cell, Nanotechnology

Novel types of laser diode array with a 100% filling factor at the emission facet are reported. The arrays utilize both parallel and tapered cavity emitters that are connected via a common Laterally Unconfined Non-Absorbing Mirror (LUNAM) defined with quantum-well intermixing technology at 808 nm wavelength. Two LUNAM array types are considered: incoherent (weakly coupled) and coherent (diffraction coupled). Incoherent

- by Dan Yanson
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- High Power, Fill Factor, Monolithic Integration, Power Density

Solar panels are gaining importance as a major alternate source of energy in the prevailing condition of depleting non renewable energy sources. Photovoltaic (PV) modules are being increasingly used in large as well as small scale installations. The performance of PV panels is affected by the shading effect due to trees, passing of clouds, neighboring buildings and any other means. This paper is an attempt to carry out systematic study of the effect of shading on the Power output, Fill factor and Efficiency of solar panel. A direct correlation was found between short circuit current and solar irradiation under uniform shading conditions. On the other hand, non uniform shading conditions yielded a variety of performance behavior. Such shading conditions should be avoided for better performance of solar panels.

- by zxcv xfg
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- Control Systems Engineering, Renewable Energy, Control Systems, Irradiation
- by Sreekumaran Nair
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- Engineering, Solar Energy, Physical sciences, Dye Sensitized Solar cell
- by Oleg Lupan and +1
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- Engineering, Photochemistry, Solar Cell, Biological Sciences
- by John Klauder and +1
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- Quantum Mechanics, Differential Geometry, Magnetic field, Mathematical Sciences
- by Bedabrata Pain
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- Signal Processing, Solid State Devices and Circuits, Random Access, Fill Factor
- by Chirangano Mangwandi
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- Mechanical Engineering, Chemical Engineering, Powder technology, Porosity
- by Jinling Zhang
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- Materials Engineering, Solar Cell, Screen printing, Microstructures
- by Michael Pellin
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- Photochemistry, Solar Cell, Crystallization, Nanotechnology
- by Ville-veikko Telkki
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- Engineering, Nuclear Magnetic Resonance, Fuel Cell, Physical sciences
- by Francesco Rossella and +1
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- Light Scattering, Fill Factor, Rayleigh Scattering, Right Handed
- by Julfikar Hossain
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- Photovoltaic, InGaN, Quantum Dot, Quantum Well
- by Evert Bende
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- Physics, Solar Cell, Photovoltaic Cell, Silicon Wafer

Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7 × 1014cm −3 have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum.

- by Sumbit Chaliha
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- Heat Treatment, Classical Physics, Thin Film, Zinc

This work explores the effect of sensor fill-factor, acquisition noise and blurring level on sub-pixel edge detection uncertainty and finally proposes a new edge detection algorithm to reduce the measurement uncertainty. Optics analysis demonstrates that the intensity profile of an edge, acquired with a digital camera, has the mathematical shape of the error function (erf). The erf is therefore expected to be the best function to fit the intensity profiles of edges. The position of the edge is then estimated through the position of the flex of the approximating curve. However, the hyperbolic tangent can be used to fit the erf with a low discrepancy, though requiring a lower computation time. For this reason the hyperbolic tangent was selected to implement the proposed edge detection algorithm. This algorithm was tested using both numerically generated images and real data. Results demonstrated the efficiency of the proposed algorithm, strongly reducing sub-pixel edge detection systematic effect.

- by Alfredo Cigada and +1
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- Mechanical Engineering, Applied Mathematics, Edge Detection, Measurement
- by Dieter Jaksch
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- Quantum Information, Mathematical Sciences, Physical sciences, Cold Atoms Physics
- by Wim Geens and +1
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- Engineering, Technology, Solar Cell, Organic solar cells
- by Brian Hardin
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- Solar Cell, Titanium, Nanotechnology, Multidisciplinary

With the advances in deep submicron CMOS technologies, CMOS-based active-pixel sensors (APS) have become a practical alternative to charge-coupled devices (CCD) imaging technology. Key advantages of CMOS image sensors are that they are fabricated in standard CMOS technologies, which allow full integration of the image sensor along with the analog and digital processing and control circuits on the same chip and that they are of low cost. Since there is a practical limit on the minimum pixel size (4~5 mum), then CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel. Such smart pixels truly show the potential of CMOS technology in imaging applications, especially for high-speed applications. This work discusses various active-pixel sensors (APS) and shows the feasibility of using the DC-level to increase the sensitivity of the pixel for low-level light applications. Avalanche-photodiodes (APDs) are described, in addition to a discussion of the breakdown mechanism and microplasma in avalanche breakdown for single photon APDs. A fully integrated, 16 times 16 pixel CMOS camera-on-a-chip, fabricated in a standard CMOS 0.18 mum technology is also shown in this work. The array is based on 256 APS with a pixel size of 20 mum times 30 mum, a fill-factor of 60% with all digital and analog blocks implemented on-chip.

- by abdulaziz naser
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- High Speed, Cmos Image Sensor, Fill Factor, Image Sensor
- by Harpreet kaur
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- Engineering, Solar Cell, Surface Roughness, Solar Energy
- by Xerxes Steirer
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- Engineering, Solar Cell, Organic Electronics, Thin Film
- by Vinod Mathew
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- Engineering, Solar Cell, Energy Conversion, Solar Energy Materials
- by Ruurd W Lof
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- Engineering, Solar Cell, Physical sciences, Low Energy Buildngs
- by Rajendra Pawar
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- Engineering, Solar Cell, Zinc Oxide, Solar Energy
- by Wei Yang
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- Engineering, Solar Cell, Polymer, Weight Loss
- by Siddhesh Shinde
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- Renewable Energy, Actual I-V curve, Fill Factor
- by Alexander Ayzner
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- Engineering, Technology, Electron Microscopy, Solar Cell
- by Jeremy Darling
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- Organic Chemistry, Astrophysical Plasma, Molecular Clouds, Fill Factor
- by Mordechai Shechter
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- Solar Cell, Solar Cells, Quality Factor, Photovoltaic Cell

Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1–5kΩ and 150-Ω preamplifier input

- by Christopher Stapels and +1
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- Fill Factor, Positional information, Spectral Sensitivity
- by Parsathi Chatterjee
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- Engineering, Solar Cell, Applied Physics, Numerical Analysis
- by Rahul Agarwal
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- Engineering, Technology, Microfluidics, Plasma Etching
- by Christian Gutiérrez García
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- Engineering, Photochemistry, Solar Cell, Energy Conversion

The achievement of I-V and P-V curves of photovoltaic modules gives the possibility of obtaining their characteristic parameters: the short-circuit current (Isc), the open-circuit voltage (Voc), the maximum power point (MPP) and the fill factor (FF). These values are significant for the design of a photovoltaic system. These curves depend on the global irradiance (G), the temperature (T) and the

- by Miguel Angel M A R T Í N E Z Bohórquez and +1
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- Maximum Power Point, Dc-Dc Boost Converter, Fill Factor, Open Circuit Voltage