Modeling of static electrical properties in organic field-effect transistors (original) (raw)

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A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models Cover Page

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Quantitative analysis of charge-carrier trapping in organic thin-film transistors from transfer characteristics Cover Page

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Effect of Trap Density on Carrier Propagation in Organic Field-Effect Transistors Investigated by Impedance Spectroscopy Cover Page

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Modeling and structural analysis of organic field effect transistor Cover Page

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Modeling of threshold voltage in pentacene organic field-effect transistors Cover Page

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Effect of Traps on Carrier Injection and Transport in Organic Field-effect Transistor Cover Page

An analytical solution for contact resistance of staggered organic field-effect transistors

Journal of Applied Physics, 2017

We have developed analytical models for bias dependent contact resistance (RC) and output characteristics of staggered organic field-effect transistors (OFETS) based on a bulk resistance-approximated and mobility-modified current-crowding method. Numerical evaluations of RC and its resistive components show that the bias dependency of the bulk resistance is negligible. Consequently, the properties of the active layer interfaces determine RC and its characteristics. Effective parameters include a normally constant charge injection barrier at the organic-metal interface (Eb) and a gate induced surface carrier-concentration (PS0) at the organic-insulator boundary. The energy barrier pertains to the fabrication process, and its related resistance (rc) can be determined as the fitting parameter of the theoretical model. However, PS0 is strongly gate bias dependent and the results of the numerical model indicate that the resulting component (rch) is dominant and has a considerable effect ...

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An analytical solution for contact resistance of staggered organic field-effect transistors Cover Page

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Analysis of electrical parameters of organic thin film transistors based on thickness variation in semi-conducting and dielectric layers Cover Page

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Influence of traps on transient electric field and mobility evaluation in organic field-effect transistors Cover Page

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Analytical modeling of contact resistance in organic transistors Cover Page