Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current
Yasushi Akasaka, Naoki Fukata
Applied Physics Letters, 2006
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Simulation of electron transmittance and tunnel current in n+ Poly-Si-HfSiOxN-Trap-SiO2-Si(100) capacitors using analytical and numerical approaches
Khairurrijal Khairurrijal
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Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks
Piyas Samanta
Microelectronics Reliability, 2010
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Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode
Fred Roozeboom
2006 International Conference on Advanced Semiconductor Devices and Microsystems, 2006
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Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors
Khairurrijal Khairurrijal
Journal of Applied Physics, 2010
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Stress-induced leakage current in p/sup +/ poly MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/ gate material
C. Salm
IEEE Electron Device Letters, 2000
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A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique
Jack Le
IEEE Electron Device Letters, 2007
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Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems
Chadwin Young
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Minority carrier tunneling and stress-induced leakage current for p< sup>+ gate MOS capacitors with poly-Si and poly-Si< sub> 0.7 Ge< sub> 0.3 gate material
C. Salm
1999
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Electron Tunnel Current through HfO[sub 2]∕SiO[sub 2] Nanometer-thick Layers with a Trapped Charge: Effects of Electron Incident Angle and Silicon Substrate Orientation
Khairurrijal Khairurrijal
2011
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A Theoretical Study on Electron Tunneling Current in Isotropic High-κ Dielectric Stack-Based MOS Capacitors with Charge Trapping
Khairurrijal Khairurrijal
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An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO[sub 2] and SiO[sub 2] Interfaces
Khairurrijal Khairurrijal
2011
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A model of the stress induced leakage current in gate oxides
A. Paccagnella
2001
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Experiments and modelling to determine trapped holes and slow states in Fowler-Nordheim stressed MOS capacitors
B. Sagnes
Microelectronic Engineering, 1995
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Characterization of High-K Gate Dielectrics using MOS Capacitors
IJSRP Journal
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Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
H. García
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
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Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack
Ryu Hasunuma
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
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Degradation of oxides in metal-oxide-semiconductor capacitors under high-field stress
Rajendra Patrikar
Journal of Applied Physics, 1993
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Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique
Se jong Rhee
Applied Physics Letters, 2005
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Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect
Guido Groeseneken
IEEE Transactions on Electron Devices, 2000
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The Effect of Electron Incident Angle on Transmittance and Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor with High-K Dielectric Gate Stack
Khairurrijal Khairurrijal
2010
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Evidence of hafnia oxygen vacancy defects in MOCVD grown Hf x Si 1− x O y ultrathin gate dielectrics gated with Ru electrode
Milan Tapajna
Microelectronic Engineering, 2007
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Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses
Khairurrijal Khairurrijal
Brazilian Journal of Physics, 2010
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The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode
Se jong Rhee
IEEE Transactions on Electron Devices, 2004
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Influence of neutral hole traps in thin gate oxides on MOS device degradation during Fowler-Nordheim stress
Piyas Samanta
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings
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On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures
Giuseppe Iannaccone
Applied Physics Letters, 2002
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Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress
PIYAS SAMANTA
Journal of Applied Physics, 2017
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A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient
Denny Tang
IEEE Transactions on Electron Devices, 2000
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