Chemical Vapor Deposition Research Papers (original) (raw)

For Abstract see ChemInform Abstract in Full Text.

- by Jonas Sundqvist
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES

Transparent conducting ZnO:F was deposited as thin films on soda lime glass substrates by atmospheric pressure chemical vapor deposition (CVD) deposition at substrate temperatures of 480–500 °C. The precursors diethylzinc, tetramethylethylenediamine and benzoyl fluoride were dissolved in xylene. The solution was nebulized ultrasonically and then flash vaporized by a carrier gas of nitrogen preheated to 150 °C. Ethanol was vaporized separately, and these vapors were then mixed to form a homogeneous vapor mixture. Good reproducibility was achieved using this new CVD method. Uniform thicknesses were obtained by moving the heated glass substrates through the deposition zone. The best electrical and optical properties were obtained when the precursor solution was aged for more than a week before use. The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. The electrical resistivity of the films was as low as 5 × 10−4 Ωcm. The mobility was about ...

- by R. Gordon
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- Engineering, Materials Engineering, Materials Chemistry, Crystal Growth
- by Vishal Udmale
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- Engineering, Carbon, Catalysts, Scanning Electron Microscopy
- by Alan Weimer
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by Hossein Sojoudi
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- Renewable Energy, Thin Films and Coatings, Energy, Energy and Environment
- by Paritosh Mohanty
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- Chemistry, Electron Diffraction, Nanowire, Multidisciplinary
- by Po Ting Lin and +2
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- Mechanical Engineering, Radial Basis Function, Modeling, Optimization
- by Xiaoman Duan
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- Engineering, Crystal Growth, Crystal Engineering, Chemical Vapor Deposition

Extensive research and development programs on the (Very) High Temperature gas cooled Reactor (V/HTR) are being conducted by many countries mainly promoted by the attractiveness of this concept and its capability for other applications... more

- by Francois Charollais
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- Engineering, Modeling, Engineering Design, Optimization
- by Jaime Ortiz-López and +1
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- Microelectronics, Electron Microscopy, Raman Spectroscopy, Scanning Electron Microscopy

Self-assembled Si nanowires can be grown using chemical vapor deposition accelerated by metal catalyst nanoparticles. The diameter of the nanowires depends on the size of the nanoparticles, which in turn can be controlled by varying the amount of catalyst deposited and the annealing conditions. The nanowires make good electrical connection to the substrate on which they are grown. They generally grow epitaxially along directions and can grow laterally from one vertical (111)-oriented surface toward another and make good mechanical and electrical connection to the second surface. The nanowires can serve as sensors or as the channels of field-effect transistors.

- by Shashank M
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- Catalysts, Epitaxial Growth, Self Assembly, Nanoparticles
- by R. Gordon
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- Engineering, Atomic Layer Deposition, Chemical Vapor Deposition, Diffusion
- by Davide Barreca
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- Engineering, Chemical Vapor Deposition, MOCVD, Thin Film
- by J. Keinonen
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- Engineering, Chemical Vapor Deposition, Thin Film, CHEMICAL SCIENCES
- by R. Gordon
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- Engineering, Materials Chemistry, Chemical Vapor Deposition, Thin Film
- by Michael Hitchman
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by Susanne Hoffmann-Eifert and +1
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by Frederick Giles and +1
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- Chemical Vapor Deposition, Bipolar transistors, Power Transistor, Electrical And Electronic Engineering
- by Tero Pilvi
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- Engineering, Chemical Vapor Deposition, Thin Films, Thin Film
- by Ozkan Yildiz and +2
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- Engineering, Chemical Vapor Deposition, Physical sciences, CHEMICAL SCIENCES

CVD Tanımı
CVD Çalışma Prensibi
CVD Reaksiyon Türleri
CVD Kullanım Alanları, Örnekleri, Avantajları ve Dezavantajları
CVD Çeşitleri
CVD ile ALD & PVD Farkları

- by Prof.Dr. İbrahim USLU and +1
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- Thin Films and Coatings, Thin film (Physics), Chemical Vapor Deposition, CVD instrumentation and fabrication
- by Jeffrey Jaramillo
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- Electronics, Chemical Vapor Deposition, Electronic Cigarettes, Cigarettes

CVD nedir,CVD yapilma yontemleri ,
yontemlerin farklari, avantajlari,PCV ve CVD farki

- by Aytek Memmedli
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- Chemical Engineering, Chemistry, Physical Chemistry, Nanotechnology
- by Amit Kumar Ghosh
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- Materials Engineering, Chemical Vapor Deposition, Diamond, Chip

En este experimento se determinó la presión de vapor de un líquido que en este caso fue el agua, utilizando la relación presión y temperatura. Se evalúo diferentes temperaturas para calcular la entalpía de vaporización del líquido usado a partir de la ecuación de Clausius-Clapeyron, que permite graficar los datos de uno sobre la temperatura y el logaritmo natural de la presión del agua, datos que se obtuvieron a partir de diferentes ecuaciones con datos arrojados por el experimento. Los valores obtenidos en la práctica determinó una entalpía de vaporización del agua de 795,127 cal/gr con un porcentaje de error del 47,25%. ABSTRACT In this experiment, the vapor pressure of a liquid, which in this case was water, was determined using the pressure and temperature relationship. Different temperatures were evaluated to calculate the enthalpy of vaporization of the liquid used from the Clausius-Clapeyron equation, which allows graphing the data of one on the temperature and the natural logarithm of the water pressure, data that were obtained from different equations with data thrown by the experiment. The values obtained in practice determined an enthalpy of vaporization of water of 795,127 cal/gr with an error rate of 47.25%.

- by Luis Alberto Jiménez Medina and +1
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- Chemical Vapor Deposition, Fisicoquímica, Presion De Vapor, laboratorio de fisicoquimica
- by Hasan Mahmud and +1
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- Condensed Matter Physics, Thin Films and Coatings, Tribology, Immersion and Experience

Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was briefly reviewed. In2S3 has emerged as a promising low-hazard buffer (or window) material, and has proven to improve the properties of the solar cells, while reducing toxicity. Various deposition techniques have been employed to synthesize In2S3 films on different types of substrates. Until now, atomic layer deposition (ALD) and ionic layer gas atomic reaction (ILGAR) techniques have been the two most successful, yielding maximum energy conversion efficiencies up to 16.4% and 16.1%, respectively. The impact of varied deposition parameters upon the In2S3 film properties and performance of cadmium (Cd)-free solar cells has been outlined. A comparative/operational analysis (solar cell efficiencies above 9% reported for cell area ≤ 1cm2) of various buffer layers used in two primary types of TFSC technology: chalcopyrite (CIS/CIGS)- and CdTe-based solar cells was also performed to measure the progress of In2S3 compared to its counterparts.

- by Maqsood Ali Mughal
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- Photovoltaics, Solar Cell, Thin film solar cells, Organic solar cells
- by Kinshuk Dasgupta
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- Chemical Engineering, Catalysis, Carbon Nanotubes, Carbon Nanotube

This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiN x :H and SiN x :H(C)) and non-hydrogenated (SiN x and SiN x (C)) forms. The emphasis is on emerging trends and innovations in these SiN x material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiN x and its SiN x (C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

The chemical vapor deposition (CVD) of metals is a rapidly developing area in which metal-containing compounds are being synthesized as new precursors. This article reviews this area and discusses precursor design, reaction pathways, reactor types, and the influence of reactor operating conditions on film growth. We have gathered recent results for precursor design and CVD chemistry and show how analysis of results from CVD experiments can be used to assist in the development of new CVD precursors.

- by Toivo Kodas
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by abhay joshi
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- Engineering, Technology, Chemical Vapor Deposition, Growth
- by Charles W Dunnill
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by Nikolay Suetin and +1
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by Troy Manning
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- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES
- by Jiangtao Zhu
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- Biomass, Minerals, BIOCHAR, Carbon Nanotubes

A stagnation point cold-wall reactor was used for the CVD of corundum alumina (α-Al2O3) on metallic substrates. Depositions were carried out under low pressure using the thermally induced pyrolytic oxidation of aluminum tri-isopropoxide (ATI). The effects of the substrate temperature (300–1080 °C) and the total pressure (50–250 mbar) on the growth rate and morphology of the deposits were investigated. An excess of oxygen facilitates the formation of dense alumina films. Precursor depletion was prevented using high gas velocity, low ATI concentration, and a high temperature gradient. X-ray diffraction (XRD) analysis provided evidence of corundum alumina deposition at substrate temperatures above 1000 °C.

- by Naoufal Bahlawane
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- Engineering, Chemical Vapor Deposition, Thin Film, CHEMICAL SCIENCES
- by Timo Sajavaara and +1
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- Engineering, Chemical Vapor Deposition, Thin Films, CHEMICAL SCIENCES
- by WEI WEN LIU
- •
- Electron Microscopy, Nanotechnology, Chemical Vapor Deposition, Nanoscience
- by Marja Tiitta
- •
- Engineering, Chemical Vapor Deposition, Thin Film, CHEMICAL SCIENCES

Aim of this research is to develop an effective way in producing multi-walled carbon nanotubes (MWNTs) via chemical vapour deposition method using acetylene as carbon source and synthesized mesoporous M/MCM-41 (M = Ni, Co and Fe) as catalyst. The mesoporous MCM41 is synthesized by using sodium metasilicate as silica source of frameworks and cetyltrimethylammoniumbromide (CTAB) as template. The effect of temperatures and growth times are investigated to produce MWNTs with high yield and high quality. The low-angle X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM) results verified the formation of MCM41. Meanwhile, high-angle XRD, Raman spectra and transmission electron microscopy (TEM) results confirmed the synthesized carbon nanotubes at 600 °C and growth time for 30 min are multi-walled. The yield obtained is 1353 mg in 30 minutes. It shows that the MCM-41 has a promising potential to produce MWNTs at low cost and shorter duration.

- by Khairul Anuar Mat Amin
- •
- Catalysts, Carbon Nanotubes, Chemical Vapor Deposition, MCM-41

Nanostructured α-Fe2O3 thin film electrodes were deposited
by aerosol-assisted chemical vapour deposition (AACVD) for
photoelectrochemical (PEC) water splitting on conducting
glass substrates using 0.1 M methanolic solution of Fe(acac)3.
The XRD analysis confirmed that the films are highly crystalline
α-Fe2O3 and free from other iron oxide phases. The
highly reproducible electrodes have an optical bandgap of
~2.15 eV and exhibit anodic photocurrent. The current–
voltage characterization of the electrodes reveals that the photocurrent
density strongly depended on the film morphology (SEM) analysis showed a change in the surface morphology
with the change in deposition temperature. The films deposited
at 450 °C have nanoporous structures which provide a
maximum electrode/electrolyte interface. The maximum photocurrent
density of 455 μA/cm2 was achieved at 0.25 V vs.
Ag/AgCl/3M KCl (~1.23 V vs. RHE) and the incident photon
to electron conversion efficiency (IPCE) was 23.6% at
350 nm for the electrode deposited at 450 °C.

Zinc sulphide thin films were prepared by chemical bath deposition (CBD) and the properties of these films are compared with those deposited by Physical vapour deposition (PVD). The variation in the optical and electrical properties of the CBD grown ZnS films with the pH of the reaction mixture was investigated. The chemically deposited ZnS films showed a wide band gap of 3.93eV and a transparency of more than 80% in the visible region. The lowest resistivity of ~104 Ωcm was obtained for the films prepared from a chemical bath of pH 10.6. The refractive index, extinction coefficient and the dielectric constants of CBD ZnS films are also reported.

- by murali k v
- •
- Engineering, Materials Engineering, Technology, Crystal Growth
- by Suguru Noda
- •
- Engineering, Chemical Vapor Deposition, CHEMICAL SCIENCES, Polycrystalline Silicon
- by samhun yun
- •
- Engineering, Membrane Science, Morphology, Chemical Vapor Deposition