Sputtering Research Papers - Academia.edu (original) (raw)

A functionally graded multilayer Ni – Ti thin film was deposited on a SiO 2/ Si substrate by d.c. sputtering using a ramped heated Ni – Ti alloy target. The stand-alone films were crystallized at 500°C in vacuum better than 10-7 Torr.... more

A functionally graded multilayer Ni – Ti thin film was deposited on a SiO 2/ Si substrate by d.c. sputtering using a ramped heated Ni – Ti alloy target. The stand-alone films were crystallized at 500°C in vacuum better than 10-7 Torr. Transmission electron microscopy micrographs taken along the film cross section show two distinct regions, thin and thick, with weak R and B2 phases, respectively. The film compositions along the thickness were measured and quantified using the standard-less EELSMODEL method. The film deposited during the initial thermal ramp (thin regions) displays an average of 54 at.% Ni while the film deposited at a more elevated target temperature (thick regions) shows about 51 at.% Ni .

Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight... more

Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into the growth mechanisms of the films. A modeling has been done on the epitaxial thin film growth with sputtering process. The parameters during sputtering like, sputtering yield, pressure, temperature, current density, deposition time were related and an attempt has been made to analyze the sputtering process.

Thin AlN films were deposited on the air side of float glass substrates by reactive direct-current magnetron sputtering of an aluminum target in Ar–N2 gas mixtures, and at 4 kW of power. These films were characterized by transmission... more

Thin AlN films were deposited on the air side of float glass substrates by reactive direct-current magnetron sputtering of an aluminum target in Ar–N2 gas mixtures, and at 4 kW of power. These films were characterized by transmission electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy (XPS). For nitrogen partial flow rates fN2, of 0.3 or higher, and for thicknesses of up to 800 Å, the gas composition does not affect the composition and morphology of the as-deposited films significantly. On the other hand, the morphology of films deposited on float glass and heated in air to 700 °C has a strong dependence on the composition of the working gas: films that are formed at low values of fN2 craze, while those deposited at high N2 partial pressures remain continuous upon heating but develop a wavy morphology. XPS/inert gas depth profiling analyses of the coated float glass samples revealed the formation of a thin layer with an N/Al ratio less than that of the as-de...

Yttria-stabilized zirconia (YSZ) thin films were fabricated successfully using reactive RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron... more

Yttria-stabilized zirconia (YSZ) thin films were fabricated successfully using reactive RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to synthesize YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. In this work, this research is to study the structural, morphological, thickness of YSZ nanostructure that can be used as electrolyte for solid oxide fuel cell (SOFC). By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400oC. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300oC.X-ray diffraction study revealed th...

Low-temperature epitaxial growth of multicomponent alloy-based thin films remains an outstanding challenge in materials science and is important for established fundamental properties of these complex materials. Here, Cantor nitride... more

Low-temperature epitaxial growth of multicomponent alloy-based thin films remains an outstanding challenge in materials science and is important for established fundamental properties of these complex materials. Here, Cantor nitride (CrMnFeCoNi)N thin films were epitaxially grown on MgO(100) substrates at low deposition temperature by magnetic-field-assisted dc-magnetron sputtering, a technique where a magnetic field is applied to steer the dense plasma to the substrate thereby influencing the flux of Ar-ions bombarding the film during growth. Without ion bombardment, the film displayed textured growth. As the ion flux was increased, the films exhibited epitaxial growth. The epitaxial relationship between film and substrate was found to be cube on cube (001)film||(001)MgO, [100]film||[100]MgO. The epitaxy was retained up to a thickness of approximately ∼100 nm after which the growth becomes textured with a 002 out-of-plane orientation. The elastic constants determined by Brillouin i...

We report on the magnetic and structural properties of ferromagnetic-insulating La2CoMnO6−δ thin films grown on top of (001) SrTiO3 substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray... more

We report on the magnetic and structural properties of ferromagnetic-insulating La2CoMnO6−δ thin films grown on top of (001) SrTiO3 substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields and remanence) of the hysteresis loops. Both Curie temperature and magnetic hysteresis turn out to be dependent on the oxygen stoichiometry. In situ annealing conditions allow tailoring the oxygen content of the films, therefore controlling their microstructure and magnetic properties.

We investigated selective-area micropatterning of iron garnet film grown by liquid-phase epitaxy (LPE). This method of producing a flat-surface structure overcomes the disadvantages of geometrical grooves, which are formed by wet or dry... more

We investigated selective-area micropatterning of iron garnet film grown by liquid-phase epitaxy (LPE). This method of producing a flat-surface structure overcomes the disadvantages of geometrical grooves, which are formed by wet or dry etching, with a limited resolution due to underetching and nonplanar structure. Moreover, patterned iron garnet films grown by selective-area LPE have better single-crystal properties than films grown by selective-area sputter epitaxy deposition. Thus, this method offers new possibilities for the fabrication of integrated magnetooptic light switch arrays, magnetic waveguides and other magnetooptic devices.

We report on the structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, using transmission electron microscopy (TEM), high-resolution x-ray diffraction, and Rutherford... more

We report on the structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, using transmission electron microscopy (TEM), high-resolution x-ray diffraction, and Rutherford backscattering spectroscopy (RBS) measurements. The ferromagnetic Mn-doped ZnO film showed magnetization hysteresis at 5 and 300K. A TEM analysis revealed that the Mn-doped ZnO included a high density of round-shaped cubic and elongated hexagonal MnZn oxide precipitates. The incorporation of Mn caused a large amount of structural disorder in the crystalline columnar ZnO lattice, although the wurtzite crystal structure was maintained. The observed ferromagnetism is discussed based on the structural characteristics indicated by TEM and the behavior of Mn when it is substituted into a ZnO lattice derived from RBS measurements.

Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO) films with and without an amorphous silicon (a-Si) capping layer was investigated using a radio-frequency (rf) argon thermal plasma jet of argon at atmospheric... more

Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO) films with and without an amorphous silicon (a-Si) capping layer was investigated using a radio-frequency (rf) argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 108 to 104–105 Ω cm at maximum surface temperatures Tmaxs above 650 °C, whereas the resistivity increased from 10-4 to 10-3–10-2Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10-4Ω cm, even after TPJ annealing at a Tmax of 825 °C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous- and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n+-a-Si/textured AZO was applied for single junction n-...

Cu100−xCox thin films have been obtained by sputtering (x = 3, 9) and sputter gas aggregation (x = 2.5, 7.5) and subsequent annealing at 400 °C for 1 h. We have studied their structural, magnetic, and magnetotransport properties, both for... more

Cu100−xCox thin films have been obtained by sputtering (x = 3, 9) and sputter gas aggregation (x = 2.5, 7.5) and subsequent annealing at 400 °C for 1 h. We have studied their structural, magnetic, and magnetotransport properties, both for the as-deposited and annealed samples, confirming the important role of the fabrication method in the properties. The magnetic measurements and the fitting of the hysteresis loops evidence that as-deposited samples consist of superparamagnetic (SPM) and/or ferromagnetic clusters, but in the samples obtained by gas aggregation the clusters are greater (with ferromagnetic behavior at room temperature) whereas in the samples obtained by sputtering, the clusters are smaller and there are also diluted Co atoms in the Cu matrix. The annealing affects negligibly the samples obtained by gas aggregation, but the ones obtained by sputtering are more affected, appearing greater clusters. This behavior is also reflected in the magnetoresistance (MR) measuremen...

The growth of WxSiyOz thin films deposited by reactive magnetron sputtering at glancing angles and from a single heterogeneous target has been studied from experimental and theoretical point of views. The studied target is mainly of Si... more

The growth of WxSiyOz thin films deposited by reactive magnetron sputtering at glancing angles and from a single heterogeneous target has been studied from experimental and theoretical point of views. The studied target is mainly of Si with several stripes of W attached to the surface [1]. Thin films show different structural patterns resembling tilted columnar structures whose angle depend upon the deposition conditions and different film compositions. The deposition process has been studied through simulations in order to explain the microstructural features [2] and chemical composition of the films. In this way, not only the different sputtering rate of Si and W atoms from the heterogeneous target influence the film morphology [3], but also the fact that both atoms possess very different masses and radii. These facts make their mean free path in the plasma/gas phase very different, and thus their thermalization process through elastic collisions with the plasma/gas heavy particle...

In this work we have deposited TiN films using a Triode-Magnetron-Sputtering system. The main changing parameter was the composition of the gas N2/Ar and hence the stoechiometry of the obtained film, TixNy. This allows for color variation... more

In this work we have deposited TiN films using a Triode-Magnetron-Sputtering system. The main changing parameter was the composition of the gas N2/Ar and hence the stoechiometry of the obtained film, TixNy. This allows for color variation of the deposited film, with different color intensities and reflectivities for each studied condition. Reflectivity data were obtained by spectrophotometry and compared to an Au film, used as the standard. We verify that it is possible to obtain TiN films whose reflectivity curves are very close to those of Au.

Kesterite Cu2ZnSnS4 (CZTS), with direct and tunable bandgap, high absorption coefficient, low-cost processing, earth-abundance, and non-toxicity, has become a promising absorber material for emerging thin film solar cells. The film... more

Kesterite Cu2ZnSnS4 (CZTS), with direct and tunable bandgap, high absorption coefficient, low-cost processing, earth-abundance, and non-toxicity, has become a promising absorber material for emerging thin film solar cells. The film growth, phase formation, and stoichiometry, as well as the electrical and optical properties of the sputtered grown CZTS thin films, are greatly influenced by the annealing temperature and pressure. In this work, we use a series of material characterization techniques followed by numerical simulations to determine how the annealing conditions affect the properties of CZTS thin films and the photovoltaic performance of the corresponding thin film solar cells. Sputtered grown CZTS samples were annealed at different temperatures (470 and 560 °C) and pressures (250 and 350 Torr). UV-visible spectroscopy was used to determine the optical bandgap and the absorption spectra. The experimentally determined values are then used as input parameters in the Solar Cell...

The stimuli response of a polymer – metal bilayer architecture was investigated. This solvent activated system showed a dynamic response when exposed to a particular solvent. Polymer wires were fabricated using a glass capillary array... more

The stimuli response of a polymer – metal bilayer architecture was investigated. This solvent activated system showed a dynamic response when exposed to a particular solvent. Polymer wires were fabricated using a glass capillary array (GCA) as a template. The synthesized wires were then sputtered with silver and exposed to dichloromethane (DCM). The solvent activated response results in a number

We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10−4 and 10−7 Pa (standard... more

We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10−4 and 10−7 Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 1020 and 1019 cm−3, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgap states were affected strongly by the residual hydrogen (possibly H2O). The step-wise near-CBM states were observed only in the STD films deposited without O2 gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the...