Sputtering Research Papers - Academia.edu (original) (raw)

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- Computer Science, Physics, Remote Sensing, Standard Deviation
- by Augusto M C Moutinho
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- Condensed Matter Physics, Quantum Physics, Surface Science, Sputtering
- by Soo Kim
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- Mechanical Engineering, Chemical Engineering, Design, Production
- by J. Kools
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- Mechanical Engineering, Condensed Matter Physics, Thin Films, Sputtering
- by Hulya Demiryont
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- Mechanical Engineering, Thin Films, Thin Film, Optical Properties
- by Fang-ling Kuo
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- Engineering, Technology, Zinc Oxide, Physical sciences
- by Gary Selwyn
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- Engineering, Technology, Plasma Processing, Thin Films

Temperature above 600°C during the fabrication process is required to form the L10 compound ordering phase in FePt nanoparticles. The L10-FePt nanoparticles are ferromagnetic with high magnetic anisotropy. Practically, another ordering that is required is the orientation of their crystal c axis perpendicular to the plane of the nanolayer. The effects of the presence of Ag in reducing the transition temperature and making FePt nanocrystals in the L10-FePt phase aligned, in this work, have been studied and determined. The results of XRD analysis indicate that in fabrication using the co-sputtering method, firstly, the presence of Ag before annealing gives rise to the decline of the c parameter of the crystal lattice. This result of XRD analysis has been compared
with the result of the RKKY exchange interaction model as an experimental confirmation of this model. Secondly, during annealing, with the formation of FePt-Ag nanostructure, the easy axis of FePt nanoparticles in the L10-FePt phase appears parallel to each other. These results, which are the consequence of the presence of Ag, are obtained by studying FE-SEM images, XRD patterns, and magnetic characterization.

- by laijun liu
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- Engineering, Materials Engineering, Condensed Matter Physics, Quantum Physics
- by Alberto Villa and +1
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- Engineering, Nanoparticle, Scanning Transmission Electron Microscopy, Activated Carbon
- by Tushar Ghosh
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- Chemical Engineering, Photochemistry, ZnO, Photoluminescence

Acquiring good adhesion of ITO thin films on polymer substrate is a major concern, especially for space related applications. Delamination of ITO coating on these polymers can seriously damage the spacecraft. This paper presents the development of highly transparent and conducting ITO thin films on as-received and surface treated fluorinated ethylene propylene (FEP) and Kapton ® substrates by reactive direct current magnetron sputtering. Stability of the ITO coating on FEP and Kapton ® substrates was studied in simulated space environments. Environmental tests such as: relative humidity, thermal cycling and thermo vacuum were performed. Thermo-optical properties and sheet resistance of ITO coated FEP and Kapton ® substrates were studied before and after environmental tests. Optimized ITO coating with thickness of ~ 15 nm on FEP and Kapton ® substrates showed sheet resistance in the range of 2–4 kΩ/sq. with high average transmittance and high IR emittance. Adhesion of ITO coating on FEP substrate was improved by Ar plasma etching. X-ray photoelectron spectroscopy and field emission scanning electron microscopic studies of etched FEP substrate showed defluorination and high roughness of the etched surface which helped for better adhesion of ITO coating. We demonstrated that ITO coated plasma etched FEP substrate showed no change in the sheet resistance and thermo-optical properties. Moreover, ITO coated etched FEP substrate showed good environmental stability than ITO coated untreated FEP substrates.

- by Harish C Barshilia, Ph D and +1
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- Plasma Etching, Sputtering, FEP, ITO thin films
- by Martina CIacchi
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- Production, Crystal structure, Sputtering, Throughput

A DC dual magnetron sputtering system with graphite (C) and silicon (Si) targets was used to grow stoichiometric and non-stoichiometric silicon carbide (SixCy) thin films at low temperature. Two independently DC power sources were used to enable the total discharge power
be shared, under certain proportions, between the Si and C magnetron cathodes. The motivation was to control the sputtering rate of each target so as to vary the stoichiometric ratio x/y of the deposited films. The species content, thickness and chemical bonds of as-deposited SixCy films were studied
by Rutherford backscattering spectroscopy (RBS), profilometry analysis and Fourier transform infrared absorption (FTIR), respectively. Overall, the present work reveals a new reliable plasma sputtering technique for low temperature growth of amorphous SixCy thin films with the capability of tuning the degree of formation of a-SiC, a-Si and a-C bonds in the film bulk.

- by Mariana Amorim Fraga
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- Thin Films, Silicon Carbide, Sputtering

İnce film üretim teknikleri
Kopartma (Sputtering) yöntemi
Kopartma (Sputtering) sisteminin temel bileşenleri
Kopartma (Sputtering) yönteminin parametreleri
Kopartma (Sputtering) sisteminin çalışma prensibi
Kopartma (Sputtering) yönteminin uygulandığı sistemler
Magnetron kopartma (sputtering) sistemi
DC/RF (diyot) kopartma (sputtering) sistemi
Triyod kopartma (sputtering) sistemi
İyon Demeti kopartma (sputtering) Sistemi
Magnetron ve magnetron olmayan kopartma sistemleri arasındaki fark
Kullanılan gazlar
Uygulama alanları
Avantajları
Dezavantajları
Özet
Kaynaklar
Teşekkür

- by Francois Rossi
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- Atomic Force Microscopy, Multidisciplinary, Plasma Processing, Methane
- by Thorsten Lill
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- Geochemistry, Time-of-flight mass spectrometry, Time of Flight, Sputtering
- by marko hakovirta
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- Engineering, Technology, Plasma Processing, Copper

The performance ofTi.3W.7 and Nb thin films as diffusion barriers for Au was investigated by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). The films were sputter deposited in Ar:N2 (70:30 vol%) or pure Ar on amorphous Si02. They were annealed in air at temperatures ranging from 250·C up to 750·C for several hours. In-depth profiles revealed an onset of oxidation of the barriers at 520·C for Nb and 600·C for TiW. Barrier oxidation and extensive diffusion could be correlated. Distinct diffusion behavior as a function of temperature was established between TiW and Nb. A Nb multilayer structure was found to provide the best reliability as the barrier and as the adhesion layer.

- by Nicole Herbots and +1
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- Electronic Engineering, Engineering Physics, Materials Engineering, Physics
- by Jong Lu
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- Nanoelectronics, Scanning Electron Microscopy, Thin Film, Optical Properties
- by Chingting Lee
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- Engineering, Technology, Physical sciences, Plasma Treatment
- by Suguru Noda
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- Engineering, Technology, Si, Physical sciences
- by Luke Hanley
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- Condensed Matter Physics, Quantum Physics, Surface Science, Molecular Dynamics
- by Arghya Narayan Banerjee
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- Nanotechnology, Nanoscience, Sputtering
- by Chang Fu Dee
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- Multidisciplinary, Thin Films, Thin Film, Nitrogen
- by Mark Engelhard
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- Condensed Matter Physics, Glass, Secondary Ion Mass Spectrometry, Zinc Oxide
- by Duk Young Jeon
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- Engineering, Technology, Scanning Electron Microscopy, Morphology
- by Martin Negrete Gonzalez
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- Mechanical Engineering, Evaporation, Thin Films, Thin Film
- by M. S. M. Saifullah
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- Sol-Gel Technology, Nanolithography, Sputtering, Electron Beam Writing
- by Zsolt Ajtony
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- Analytical Chemistry, Arsenic, Trace Metals, Pyrolysis
- by Jebreel Khoshman
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- Near Infrared, Thin Film, Radio Frequency, Sputtering
- by Etienne Quesnel
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- Engineering, Technology, Microstructure, Transmission Electron Microscopy
- by Kenneth Järrendahl
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- Materials Engineering, Mechanical Engineering, Optics, Medical Imaging

Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Ye...

- by Andre Anders
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- Engineering, Physics, Evaporation, Propulsion
- by N. Brenning
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- High Voltage, Deposition, Natural Sciences, Sputtering
- by Mohan Rao Gowravaram
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- Engineering, Materials Science, Technology, Annealing
- by Sekhar Chandra Ray
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- Materials Engineering, Chemical Engineering, Photoluminescence, Adsorption

Graphene oxide (GO) belongs to carbon family with honeycomb structure having hydroxide, carbonyl, and carboxylic moieties at its basal plane. These functionalities are decreased in reduced graphene oxide (rGO), and this boosts the intrinsic properties of GO. Herein, in this work, the effect on physical and chemical properties of GO and rGO in combination with copper-doped zinc oxide (Cu-ZnO) thin films, prepared via DC/RF sputtering, was investigated for the very first time. The deposition of Cu-ZnO over rGO (Cu-ZnO@rGO) showed remarkably superior properties and presented an extension in d-spacing without preferred plane orientation of Cu-ZnO plane, and this was found to be due to its hydrophobic nature. The decrease in band gap of composite thin films was due to the surface electric charge conducted by GO or rGO. The enhanced dielectric constant is attributed due to increase in electron-hole pairs owing to the increase in sp2 hybridization. However, sp2 network was also found to be responsible to provide the conductivity path way which increases the dielectric loss in Cu-ZnO@rGO thin films as compared to that in Cu-ZnO@GO; this might be due to aggregation of Cu-ZnO nanoparticles over the rGO films in comparison with GO as evident from the morphological analysis by AFM. The change in surface chemistry was ascribed with the ratio of COOH, C=O, C-OH and CC bonding in the Cu-ZnO@GO and Cu-ZnO@rGO thin films as unveiled

- by Oves M.
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- Thin Films and Coatings, Graphene, Copper, Sputtering

Due to the multitude of phases that may be deposited as a result of varying degrees of target poisoning, the vanadium oxygen system provides a vehicle for studying the reactive sputtering process. Examination of the consumed O2 partial pressure, target voltage, deposition rate, and change in film composition as a function of the oxygen partial pressure, shows how the target is poisoned by oxygen. The sputtering yield for V as a function of O2 partial pressure was measured by a novel technique that collects a known fraction of the sputtered flux. The V sputtering yields were used to help determine the O sputtering yield by an analytical model based upon the work of Berg et al. Target sputter cleaning in pure Ar and the oxidation of a partially oxidized metal surface exposed to an O2 ambient are shown to approach completion following an exponential time dependence. The target and substrate oxidation are shown to be well simulated by a modified version of existing reactive sputtering models and give reasonable values for the sputtering yield of oxygen from the target surface.

- by Jeremy Theil and +1
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- Engineering, Technology, Physical sciences, Sputtering
- by Madhav Gautam
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- Materials Engineering, Materials Science, Thin Film, Sputtering
- by David Ginley
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- Engineering, Advanced Functional Materials, Annealing, Physical sciences
- by Derek Stein
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- Materials Engineering, Physics, Condensed Matter Physics, Carbon Nanotubes
- by Martin Kordesch and +1
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- Materials Engineering, Condensed Matter Physics, Near Infrared, Thin Films