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الترسيب بالرش المهبطي (Sputter Deposition) وهي تقنية تستخدم في صناعة مواد أقراص التخزين الجديدة وتحديداً أشرطة التخزين المغناطيسية وأفلام التخزين الرقيقة المفرغة، وتنطوي هذه العملية في إطلاق أيونات الآرغون على ركيزة من فيلم البوليمر مما يؤدي إلى إنتاج طبقات من جزيئات الكريستال المغناطيسي. (ar) Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment.Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1 percent) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film. (en) Napylanie w polu magnetycznym – metoda fizycznego osadzania warstw z fazy gazowej (PVD, z ang. physical vapour deposition). Proces polega na nanoszeniu na modyfikowanej powierzchni nośnika filmu zbudowanego z rozpylonych w polu magnetycznym jonów pochodzących z powierzchni materiału źródła. (pl) Магнетронное распыление — технология нанесения тонких плёнок на подложку с помощью катодного распыления мишени в плазме магнетронного разряда — диодного разряда в скрещённых полях. Технологические устройства, предназначенные для реализации этой технологии, называются магнетронными распылительными системами, или, сокращённо, магнетронами (не путать с вакуумными магнетронами — устройствами, предназначенными для генерации СВЧ-колебаний). (ru) |
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الترسيب بالرش المهبطي (Sputter Deposition) وهي تقنية تستخدم في صناعة مواد أقراص التخزين الجديدة وتحديداً أشرطة التخزين المغناطيسية وأفلام التخزين الرقيقة المفرغة، وتنطوي هذه العملية في إطلاق أيونات الآرغون على ركيزة من فيلم البوليمر مما يؤدي إلى إنتاج طبقات من جزيئات الكريستال المغناطيسي. (ar) Napylanie w polu magnetycznym – metoda fizycznego osadzania warstw z fazy gazowej (PVD, z ang. physical vapour deposition). Proces polega na nanoszeniu na modyfikowanej powierzchni nośnika filmu zbudowanego z rozpylonych w polu magnetycznym jonów pochodzących z powierzchni materiału źródła. (pl) Магнетронное распыление — технология нанесения тонких плёнок на подложку с помощью катодного распыления мишени в плазме магнетронного разряда — диодного разряда в скрещённых полях. Технологические устройства, предназначенные для реализации этой технологии, называются магнетронными распылительными системами, или, сокращённо, магнетронами (не путать с вакуумными магнетронами — устройствами, предназначенными для генерации СВЧ-колебаний). (ru) Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment.Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1 percent) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as (en) |
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ترسيب بالرش المهبطي (ar) Deposició per pulverització (ca) Napylanie w polu magnetycznym (pl) Sputter deposition (en) Магнетронное распыление (ru) |
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