200-mm wafer scale integration of high performance polycrystalline MoS2 thin film transistors (original) (raw)

Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

Yutaka Wakayama

APL Materials

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Advances in MoS2-Based Field Effect Transistors (FETs)

Eric Ashalley

Nano-Micro Letters, 2015

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Thin-film transistors with polymorphous silicon active layer

Vibha Tripathi

Journal of Non-Crystalline Solids, 2002

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Studies on Characterization of MoS2 Thin Films Deposited in Method by Chemical Bath Deposition

Marko Babic

International Journal Of Scientific Research And Education, 2016

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Contact Engineering High-Performance n-Type MoTe2 Transistors

Sukti Chatterjee

Nano Letters, 2019

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High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

yanan wang

Applied Physics Letters, 2013

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Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

Hicret Çebi

Scientific Reports, 2015

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Low Variability in Synthetic Monolayer MoS2 Devices

Saurabh Suryavanshi

ACS Nano, 2017

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Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

Nihar Pradhan

Applied Physics Letters, 2013

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Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Antal Koos

Nanomaterials, 2023

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Nature of Electronic States in Atomically Thin MoS 2 Field-Effect Transistors

subhamoy ghatak

ACS Nano, 2011

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Handbook of Thin Film Devices

Phillip Broussard

2000

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Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

Michael Man

Scientific Reports, 2016

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Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions

ashish dabral

ACS Applied Nano Materials, 2019

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μc-Si thin film transistors with very thin active layer

Nathalie Coulon

Solid-State Electronics, 2013

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Lateral Growth of MoS 2 2D Material Semiconductors Over an Insulator Via Electrodeposition

Giacomo Piana

Advanced Electronic Materials, 2021

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Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

Jaeseok Heo

Applied Physics Letters, 2011

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Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process

Chung-Che Huang

npj 2D materials and applications, 2023

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Integrating and enhancing for ASIC design using MOSIS fabrication

andra febrian

IEEE Transactions on Nuclear Science, 1990

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High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Gwan Hyoung Lee

Applied Physics Letters, 2019

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Performance Evaluation of Thin Film Transistors: History, Technology Development and Comparison: A Review

anchal sharma

International Journal of Computer Applications, 2014

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High Current Density in Monolayer MoS2 Doped by AlOx

Saurabh Suryavanshi

ACS Nano, 2021

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p-type doping in CVD grown MoS2 using Nb

Masihhur Laskar

arXiv (Cornell University), 2013

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Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics

Nikolay Cherkashin

IEEE Transactions on Electron Devices, 2006

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Heterojunction oxide thin-film transistors

Emre Yengel

2020

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Influence of the state of polysilicon/silicon dioxide interface on MOS properties

S. Luryi

1982 International Electron Devices Meeting, 1982

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Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors

Emmanuel Jacques

Solid-State Electronics, 2020

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Improving Electrical Performance of Few-Layer MoS2 FETs via Microwave Annealing

chenyu wen

IEEE Electron Device Letters, 2019

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High work function materials for source/drain contacts in printed polymer thin film transistors

Ana Arias

Applied Physics Letters, 2008

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Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition

Ning Xi

ACS applied materials & interfaces, 2017

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Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates

Apostolos Voutsas

Thin Solid Films, 1999

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Large area single crystal (0001) oriented MoS2

Masihhur Laskar

Applied Physics Letters, 2013

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MoS 2 P-type Transistors and Diodes Enabled by High Work Function MoO x Contacts

Ali Javey

Nano Letters, 2014

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Expanding Interlayer Spacing in MoS2 for Realizing an Advanced Supercapacitor

Ankit Kumar

ACS Energy Letters, 2019

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Relation between film thickness and surface doping of MoS2 based field effect transistors

César J. Lockhart de la Rosa

APL Materials, 2018

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