A double junction model of irradiated silicon pixel sensors for LHC (original) (raw)

Design and processing of various configurations of silicon pixel detectors for high irradiation tolerance up to 6×10/sup 14/ n/cm/sup 2/ in LHC application

Vladimir Eremin

IEEE Transactions on Nuclear Science, 1998

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Study of charge collection and noise in non-irradiated and irradiated silicon detectors

s Bates

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997

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Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

Damaris Maimone

Journal of Instrumentation

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Electric field distribution in irradiated silicon detectors

Anna Cavallini

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002

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Charge collection properties of Monolithic Active Pixel Sensors (MAPS) irradiated with non-ionising radiation

Claude Colledani

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007

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Study of anomalous charge collection efficiency in heavily irradiated silicon strip detectors

M. Zavrtanik

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011

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Damage-induced surface effects in silicon detectors

E. Fretwurst

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996

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Charge transport in non-irradiated and irradiated silicon detectors

Maurice Glaser

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999

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Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Jeffrey Appel

IEEE Transactions on Nuclear Science, 2002

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Trapping in proton irradiated p+-n-n+silicon sensors at fluences anticipated at the HL-LHC outer tracker

M. Minuti

Journal of Instrumentation, 2016

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The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles

E. Tuominen

2003

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Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

Katarina Borer

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2000

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The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation

IONEL LAZANU

Physica Scripta, 2006

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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors

G. Pignatel

IEEE Nuclear Science Symposium Conference Record, 2005

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The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

E. Verbitskaya

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010

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Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

E. Verbitskaya

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2000

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