Quantum Well Research Papers - Academia.edu (original) (raw)

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- Quantum Mechanics, Transport phenomena, Multidisciplinary, Nature
- by Ronggui Yang
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- Engineering, Nanocomposites, Nanotechnology, Advanced Materials

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

- by Enrico Rossi
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- Physical sciences, Long Range, Electron Transport, Electronic properties
- by francesco priolo
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- Materials Engineering, Pharmacology, Biochemistry, Bioinformatics
- by sushil kumar
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- Quantum Cascade Lasers, Multidisciplinary, Optical Waveguides, Semiconductor Lasers
- by Carlo Lamberti
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- Condensed Matter Physics, Crystal Growth, Epitaxial Growth, Synchrotron Radiation
- by Vincenzo Fiorentini
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- Engineering, Physical sciences, Quantum Well
- by T. Ochalski and +1
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- Engineering, Applied Physics, Integrated Optics, Numerical Simulation

We present results on label-free detection of DNA hybridization using InAs μ-Hall sensors. The μ-Hall sensor consisted of six 1-μm Hall crosses defined on an InAs quantum well substrate. The sensor was then covered with sputter-deposited SiO2 and Au pads were patterned on top of some of the Hall crosses. Thiolated ssDNA strands that are complementary to one end of the target ssDNA were assembled on the Au pads and the rest of the device platform was passivated with PEG-silane. Biotinylated and fluorescently-tagged complementary ssDNA to the other end of the target ssDNA were labeled with commercial streptavidin-coated 350 nm superparamagnetic beads. Labeled ssDNA were found to assemble selectively onto the Au pads after mixing with the target ssDNA, indicating successful hybridization of the three ssDNA sequences. The presence of the assembled beads was successfully detected via the Hall sensor and confirmed using laser scanning confocal microscopy. This work was supported by NIH NIGMS GM079592.

- by Goran Mihajlovic
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- Engineering, Materials Engineering, Analytical Chemistry, Technology

The unusual transport properties of graphene are the direct consequence of a peculiar band structure near the Dirac point. We determine the shape of the π bands and their characteristic splitting, and find the transition from... more

- by Karsten Horn
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- Materials Science, Band Structure, Transport Properties, Thin Film
- by Kang Wang
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- Thermal Conductivity, Silicon Oxide, Quantum Well, Numerical Calculation
- by Claudia Felser
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- Materials Science, Multidisciplinary, Superconductors, Band Gap

The quantum Hall (QH) effect in two-dimensional (2D) electrons and holes in high quality graphene samples is studied in strong magnetic fields up to 45 T. QH plateaus at filling factors nu=0,pm1,pm4\nu=0,\pm 1,\pm 4nu=0,pm1,pm4 are discovered at magnetic fields B>B>B>20 T, indicating the lifting of the four-fold degeneracy of the previously observed QH states at nu=pm(∣n∣+1/2)\nu=\pm(|n|+1/2)nu=pm(∣n∣+1/2), where nnn is the Landau level index. In particular, the presence of the nu=0,pm1\nu=0, \pm 1nu=0,pm1 QH plateaus indicates that the Landau level at the charge neutral Dirac point splits into four sublevels, lifting sublattice and spin degeneracy. The QH effect at nu=pm4\nu=\pm 4nu=pm4 is investigated in tilted magnetic field and can be attributed to lifting of the spin-degeneracy of the n=1n=1n=1 Landau level.

- by Joel Chudow
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- Magnetic field, Solid State electronic devices, Physical sciences, Electron Transport
- by Henning Höppe
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- Materials Engineering, Condensed Matter Physics, Nanotechnology, Copper
- by Antti Kuronen
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- High Pressure, Epitaxial Growth, Band Structure, Physical sciences

Conclusion: QD diode lasers with active region based on compos-ite vertically coupled self-organised InAlAs-InAs QDs in an AlGaAs matrix have been fabricated. Room temperature CW operation with a maxim&amp;amp;amp;amp;amp; output... more

- by Luke Lester
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- Current Density, Room Temperature, Quantum Well, Diode Laser
- by RADHAKRISHNAN NAGARAJAN
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- Low Frequency, Solid State Laser, Organic Semiconductor Laser, IEEE
- by Vincenzo Fiorentini
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- III-V Semiconductors, Thin Film, Tight Binding, Quantum Well
- by Steven Denbaars
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- Engineering, III-V Semiconductors, Applied Physics, Ultrafast Optics

A unipolar injection quantum cascade (QC) laser grown in an AlGaAs/GaAs material system by molecular beam epitaxy, is reported. The active material is a 30 period sequence of injectors/active regions made from Al0.33Ga0.67As/GaAs-coupled quantum wells. For this device a special waveguide design, which complies with a GaAs heavily doped substrate and very short Al0.90Ga0.10As cladding layers, has been optimized. At

- by Philippe Collot and +1
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- Engineering, Quantum Cascade Lasers, Molecular beam epitaxy, Organic Semiconductor Laser
- by xin jiang
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- Magnetic field, Physical sciences, Spin Relaxation, Temperature Dependence
- by W. Wegscheider
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- Cavity Quantum Electrodynamics, Science, Multidisciplinary, Terahertz
- by Tran Tien
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- Engineering, III-V Semiconductors, Applied Physics, Quantum Confinement
- by Albert Heberle
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- Physical sciences, Infrared, Quantum Well, Coherent Control
- by K.L. Sebastian
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- Engineering, Kinetics, Carbon, Fluorescent Dyes and Reagents
- by Henry O Everitt
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- III-V Semiconductors, Ultrafast Optics, Optical Spectroscopy, Time Resolved
- by Fedor Pikus
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- Electronic Spectra, Spin Relaxation, Electron Density, Anderson localization
- by mehmet yaşar
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- Engineering, Surfaces and Interfaces, Physical sciences, Magnetic Properties
- by Yia-chung Chang
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- Excited states, Effective mass, Quantum Well, Vacuum Science and Technology
- by W. Knox and +1
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- Physical sciences, Long Range, Experimental Study, Pulse Compression
- by Luis Vina
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- Physical sciences, Spin Relaxation, Quantum Well

Staggered InGaN quantum wells QWs grown by metal-organic chemical vapor deposition are demonstrated as improved active region for visible light emitters. Theoretical studies indicate that InGaN QW with step-function-like In content in the... more

- by Ronald Arif
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- Engineering, Physical sciences, Quantum Wells, Visible Light
- by Steven Denbaars
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- Engineering, Applied Physics, Molecular beam epitaxy, Mathematical Sciences
- by Bernd Smarsly
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- Materials Science, Electron Microscopy, Self Assembly, Crystallization

The resonant tunneling diode (RTD) has been widely studied because of its importance in the field of nanoelectronic science and technology and its potential applications in very high speed/functionality devices and circuits. Even though... more

- by Pinaki Mazumder
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- Biomedical Engineering, Quantum Theory, Science and Technology, Digital Logic
- by J. Faist
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- Quantum Cascade Lasers, Science, Multidisciplinary, Quantum Well
- by N. Rowell
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- Physical sciences, Quantum Well
- by Harry Lee
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- Engineering, Applied Physics, Integrated Optics, Organic Semiconductor Laser

Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs... more

- by Eliezer Finkman
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- Engineering, Applied Physics, Physical sciences, Temperature Dependence
- by Marcel Franz
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- Quantum Information Processing, Band Gap, Tight Binding, Quantum Well