Photoresist (original) (raw)
Fotolacke (englisch photoresist) werden bei der fotolithografischen Strukturierung verwendet, insbesondere in der Mikroelektronik und der Mikrosystemtechnik für die Produktion von Strukturen im Mikro- und Submikrometerbereich sowie bei der Leiterplattenherstellung. Die wichtigsten Ausgangsstoffe für Fotolacke sind Polymere (z. B. Polymethylmethacrylat, Novolak, ) bzw. Epoxidharze (z. B. SU-8), Lösungsmittel wie Cyclopentanon oder Gamma-Butyrolacton, sowie eine fotoempfindliche Komponente. Neben flüssigen Fotolacken gibt es noch Fest- bzw. Trockenresists (Fotofolien).
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dbo:abstract | Fotolacke (englisch photoresist) werden bei der fotolithografischen Strukturierung verwendet, insbesondere in der Mikroelektronik und der Mikrosystemtechnik für die Produktion von Strukturen im Mikro- und Submikrometerbereich sowie bei der Leiterplattenherstellung. Die wichtigsten Ausgangsstoffe für Fotolacke sind Polymere (z. B. Polymethylmethacrylat, Novolak, ) bzw. Epoxidharze (z. B. SU-8), Lösungsmittel wie Cyclopentanon oder Gamma-Butyrolacton, sowie eine fotoempfindliche Komponente. Neben flüssigen Fotolacken gibt es noch Fest- bzw. Trockenresists (Fotofolien). (de) A photoresist (also known simply as a resist) is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronic industry. The process begins by coating a substrate with a light-sensitive organic material. A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface.In the case of a positive photoresist, the photo-sensitive material is degraded by light and the developer will dissolve away the regions that were exposed to light, leaving behind a coating where the mask was placed.In the case of a negative photoresist, the photosensitive material is strengthened (either polymerized or cross-linked) by light, and the developer will dissolve away only the regions that were not exposed to light, leaving behind a coating in areas where the mask was not placed. A BARC coating (bottom anti-reflectant coating) may be applied before the photoresist is applied, to avoid reflections from occurring under the photoresist and to improve the photoresist's performance at smaller semiconductor nodes. Conventional photoresists typically consists of 3 components: resin (a binder that provides physical properties such as adhesion, chemical resistance, etc), sensitizer (which has a photoactive compound), and solvent (which keeps the resist liquid). (en) La résine photosensible (appelée aussi photorésine et parfois photorésist) est un matériau photosensible utilisé dans de nombreux procédés industriels, comme la photolithographie ou la photogravure, afin de former un revêtement protecteur ajouté à la surface d'un substrat. (fr) Fotoresis merupakan salah satu bahan yang dapat bereaksi jika terkena cahaya. Bahan ini jika dikenai cahaya akan menjadi larut (Positive Fotoresis) atau justru akan menjadi tidak larut atau mengeras (Negative Fotoresis). Biasanya, Fotoresis sendiri digunakan dalam proses fotolitografi dan merupakan bagian dari proses di pembuatan . Beberapa jenis fotoresis yang ada pada saat ini memiliki kepekaan terhadap beberapa sinar, terutama sinar ultraviolet, laser, pancaran elektron, ion, dan sinar-X. * l * b * s (in) フォトレジスト(英語:photoresist)とは、フォトリソグラフィにおいて使用される、光や電子線等によって溶解性などの物性が変化する組成物である。物質の表面に塗布され、後に続くエッチングなどの処理から物質表面を保護することから、「レジスト」 (resist) の名がある。しかしながら、現在では、感光性を有し、画像様露光・現像によりパターニングを行って表面に画像層を形成することができる物質であればフォトレジストと呼ばれ、必ずしも保護の働きがあるとは限らない。 (ja) ( 비슷한 이름의 포토레지스터에 관해서는 해당 문서를 참조하십시오.) 포토레지스트(영어: photoresist)는 표면에 패턴화된 코팅을 형성하기 위해 (노광공정), 등 여러 공정에 사용되는 광반응 물질로 감광성이 있는 수지다. 이 공정은 집적 회로 제조 등 전자산업에 필수적이다. 이 공정은 광반응 유기물질로 기질을 코팅함으로써 시작한다. 그 뒤 패턴화된 마스크는 빛을 차단하기 위해 표면에 적용됨으로써 이 물질에서 마스킹되지 않는 부분만이 빛에 노출된다. 그 뒤 표면에 솔벤트가 적용된다. (ko) Il fotoresist è usato in elettronica e nel campo delle nanotecnologie per la produzione di microchip e sistemi MEMS/MOEMS. È oltretutto anche utilizzato per predisporre le basette ramate alla fotoincisione, molto usata per la produzione di circuiti stampati. (it) Een fotoresist of fotolak is een materiaal dat onder invloed van UV-licht verandert: * Een negatief resist (NR) wordt hard door licht. De delen die zich achter het belichtingsmasker bevonden worden door de ontwikkelvloeistof weggespoeld. * Een positief resist (PR) wordt juist oplosbaar onder invloed van licht. De afgedekte delen blijven na het spoelen over. (nl) Fotorezyst – rodzaj emulsji światłoczułej stosowany głównie w fotolitografii oraz fotograwerowaniu do wytworzenia odpowiedniego wzoru na podłożu. (pl) Fotoresist är ett ljuskänsligt material som kan användas i flera industriella processer, såsom fotolitografi och , för att skapa en mönstrad beläggning på en yta. (sv) Фоторезист (от фото и англ. resist) — полимерный светочувствительный материал. Наносится на обрабатываемый материал в процессе фотолитографии или фотогравировки с целью получить соответствующее фотошаблону расположение окон для доступа травящих или иных веществ к поверхности обрабатываемого материала. (ru) Фоторези́ст (від фото і англ. resist) — полімерний світлочутливий матеріал, який змінює свою розчинність при освітленні. Фоторезисти використовуються у фотолітографії, наприклад, при виготовленні друкованих плат чи інтегральних схем. (uk) 光刻胶(英語:photoresist),亦稱為光阻或光阻劑,是指經過紫外光、深紫外光、电子束、、X射线等光照或辐射後,溶解度发生变化的耐蚀刻薄膜材料,是光刻工艺中的关键材料,主要应用于積體电路和離散元件的细微图形加工。 (zh) |
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dbo:wikiPageExternalLink | http://microchem.com/ http://www.gersteltec.ch/ http://www.mercenelabs.com/ https://www.aqmaterials.com/aqm-silsesquioxane-polymers https://www.nanofab.ualberta.ca/2017/news/new-negative-tone-ebl-resist-in-stock-aqm-siox/ |
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rdfs:comment | Fotolacke (englisch photoresist) werden bei der fotolithografischen Strukturierung verwendet, insbesondere in der Mikroelektronik und der Mikrosystemtechnik für die Produktion von Strukturen im Mikro- und Submikrometerbereich sowie bei der Leiterplattenherstellung. Die wichtigsten Ausgangsstoffe für Fotolacke sind Polymere (z. B. Polymethylmethacrylat, Novolak, ) bzw. Epoxidharze (z. B. SU-8), Lösungsmittel wie Cyclopentanon oder Gamma-Butyrolacton, sowie eine fotoempfindliche Komponente. Neben flüssigen Fotolacken gibt es noch Fest- bzw. Trockenresists (Fotofolien). (de) La résine photosensible (appelée aussi photorésine et parfois photorésist) est un matériau photosensible utilisé dans de nombreux procédés industriels, comme la photolithographie ou la photogravure, afin de former un revêtement protecteur ajouté à la surface d'un substrat. (fr) Fotoresis merupakan salah satu bahan yang dapat bereaksi jika terkena cahaya. Bahan ini jika dikenai cahaya akan menjadi larut (Positive Fotoresis) atau justru akan menjadi tidak larut atau mengeras (Negative Fotoresis). Biasanya, Fotoresis sendiri digunakan dalam proses fotolitografi dan merupakan bagian dari proses di pembuatan . Beberapa jenis fotoresis yang ada pada saat ini memiliki kepekaan terhadap beberapa sinar, terutama sinar ultraviolet, laser, pancaran elektron, ion, dan sinar-X. * l * b * s (in) フォトレジスト(英語:photoresist)とは、フォトリソグラフィにおいて使用される、光や電子線等によって溶解性などの物性が変化する組成物である。物質の表面に塗布され、後に続くエッチングなどの処理から物質表面を保護することから、「レジスト」 (resist) の名がある。しかしながら、現在では、感光性を有し、画像様露光・現像によりパターニングを行って表面に画像層を形成することができる物質であればフォトレジストと呼ばれ、必ずしも保護の働きがあるとは限らない。 (ja) ( 비슷한 이름의 포토레지스터에 관해서는 해당 문서를 참조하십시오.) 포토레지스트(영어: photoresist)는 표면에 패턴화된 코팅을 형성하기 위해 (노광공정), 등 여러 공정에 사용되는 광반응 물질로 감광성이 있는 수지다. 이 공정은 집적 회로 제조 등 전자산업에 필수적이다. 이 공정은 광반응 유기물질로 기질을 코팅함으로써 시작한다. 그 뒤 패턴화된 마스크는 빛을 차단하기 위해 표면에 적용됨으로써 이 물질에서 마스킹되지 않는 부분만이 빛에 노출된다. 그 뒤 표면에 솔벤트가 적용된다. (ko) Il fotoresist è usato in elettronica e nel campo delle nanotecnologie per la produzione di microchip e sistemi MEMS/MOEMS. È oltretutto anche utilizzato per predisporre le basette ramate alla fotoincisione, molto usata per la produzione di circuiti stampati. (it) Een fotoresist of fotolak is een materiaal dat onder invloed van UV-licht verandert: * Een negatief resist (NR) wordt hard door licht. De delen die zich achter het belichtingsmasker bevonden worden door de ontwikkelvloeistof weggespoeld. * Een positief resist (PR) wordt juist oplosbaar onder invloed van licht. De afgedekte delen blijven na het spoelen over. (nl) Fotorezyst – rodzaj emulsji światłoczułej stosowany głównie w fotolitografii oraz fotograwerowaniu do wytworzenia odpowiedniego wzoru na podłożu. (pl) Fotoresist är ett ljuskänsligt material som kan användas i flera industriella processer, såsom fotolitografi och , för att skapa en mönstrad beläggning på en yta. (sv) Фоторезист (от фото и англ. resist) — полимерный светочувствительный материал. Наносится на обрабатываемый материал в процессе фотолитографии или фотогравировки с целью получить соответствующее фотошаблону расположение окон для доступа травящих или иных веществ к поверхности обрабатываемого материала. (ru) Фоторези́ст (від фото і англ. resist) — полімерний світлочутливий матеріал, який змінює свою розчинність при освітленні. Фоторезисти використовуються у фотолітографії, наприклад, при виготовленні друкованих плат чи інтегральних схем. (uk) 光刻胶(英語:photoresist),亦稱為光阻或光阻劑,是指經過紫外光、深紫外光、电子束、、X射线等光照或辐射後,溶解度发生变化的耐蚀刻薄膜材料,是光刻工艺中的关键材料,主要应用于積體电路和離散元件的细微图形加工。 (zh) A photoresist (also known simply as a resist) is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronic industry. A BARC coating (bottom anti-reflectant coating) may be applied before the photoresist is applied, to avoid reflections from occurring under the photoresist and to improve the photoresist's performance at smaller semiconductor nodes. (en) |
rdfs:label | Vernís fotosensible (ca) Fotolack (de) Résine photosensible (fr) Fotoresis (in) Fotoresist (it) フォトレジスト (ja) 포토레지스트 (ko) Fotoresist (nl) Photoresist (en) Fotorezyst (pl) Фоторезист (ru) Fotoresist (sv) 光刻胶 (zh) Фоторезист (uk) |
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