Determination of the line edge roughness specification for 34 nm devices (original) (raw)

Modeling line edge roughness effects in sub 100 nanometer gate length devices

Martha Sanchez

2000

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Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield

Willy Sansen, K. Ronse

2003

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Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics

mahmud rahman

Solid-State Electronics, 2006

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Full 3D Statistical Simulation of Line Edge Roughness in sub-100nm MOSFETs

Savas Kaya

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Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs

T. Linton

Simulation of Semiconductor Processes and Devices 2001, 2001

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Influence of gate patterning on line edge roughness

Kurt Ronse

Journal of vacuum science & technology, 2003

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Gate Line Edge Roughness Model for Estimation of FinFET Performance Variability

Costas Spanos

IEEE Transactions on Electron Devices, 2000

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Characterization of Line-Edge Roughness in Resist Patterns and Estimation of its Effect on Device Performance

Hrituraj rathore

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Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

savas savas

IEEE Transactions on Electron Devices, 2003

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Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations in 32-nm node standard cell

David Pan

Proceedings of Spie the International Society For Optical Engineering, 2010

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Line Edge Roughness and Process Variation Effect of Three Stacked Gate-All-Around Silicon MOSFET Devices

Changbeom Woo

Journal of Nanoscience and Nanotechnology, 2017

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Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

Vassilios Constantoudis, Evangelos Gogolides

2004

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Gate edge roughness in electron beam direct write and its influence to device characteristics

Matthias Goldbach

Emerging Lithographic Technologies XII, 2008

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Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs

T. Feudel

Simulation of Semiconductor Processes and Devices 2007, 2007

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A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Chenyu Lin

2010

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Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits

Pin Su

Journal of Low Power Electronics and Applications, 2015

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Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations

Yuansheng Ma

Journal of Micro/Nanolithography, MEMS, and MOEMS, 2010

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Linking EUV lithography line edge roughness and 16nm NAND memory performance

Alessandro Pret

Microelectronic Engineering, 2012

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Effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer

Gregg M Gallatin

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2010

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Analytical and TCAD-supported Approach to Evaluate Intrinsic Process Variability in Nanoscale MOSFETs

Giuseppe Iannaccone

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Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER)

Jihwan Kwak

Electronics

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Modeling the transfer of line edge roughness from an EUV mask to the wafer | NIST

Gregg M Gallatin

2011

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Roughness Metrology of Gate All Around Silicon Nano Wire Devices

Roman Krs

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Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

Chi Fung Chui

IEEE Transactions on Electron Devices, 2013

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Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness

Frank Liu

2008

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Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy

Pascal Gouraud

Journal of Applied Physics, 2012

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Comparison of LER Induced Mismatch in NWFET and NSFET for 5-nm CMOS

Pritam Yogi

2020

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A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM

Xiaohui Tang

IEEE Transactions on Nanotechnology, 2009

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Pentagate Approach to Reduce the Line Edge Roughness Effects in Bulk Si Tri-gate Transistors

Mustafa B Akbulut

2013

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MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Amr Bayoumi

IEEE Electron Device Letters, 1999

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Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance

Vassilios Constantoudis

Journal of Computational Electronics, 2006

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A simulation study on the impact of lithographic process variations on CMOS device performance

Andreas Erdmann

Optical Microlithography XXI, 2008

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Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Binjie Cheng

Japanese Journal of Applied Physics, 2007

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A simulation study on the impact of lithographic process variations on CMOS device performance

Andreas Erdmann

Proceedings of SPIE, 2008

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