Rf-Magnetron Sputtering Research Papers - Academia.edu (original) (raw)

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- Engineering, Scanning Electron Microscopy, Biological Sciences, Crystal structure
- by ki park
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- Engineering, Technology, Crystal structure, Zinc Oxide
- by Gouri Kar
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- Materials Engineering, Thin Film, Leakage Current, Interface States
- by Joop Wolke
- •
- Engineering, Scanning Electron Microscopy, Titanium, Biological Sciences
- by Mariano Anderle
- •
- Materials Engineering, Chemical Engineering, Scanning Electron Microscopy, X Rays
- by Soo Kim
- •
- Engineering, Plasma Physics, Technology, Microstructure

İnce film üretim teknikleri
Kopartma (Sputtering) yöntemi
Kopartma (Sputtering) sisteminin temel bileşenleri
Kopartma (Sputtering) yönteminin parametreleri
Kopartma (Sputtering) sisteminin çalışma prensibi
Kopartma (Sputtering) yönteminin uygulandığı sistemler
Magnetron kopartma (sputtering) sistemi
DC/RF (diyot) kopartma (sputtering) sistemi
Triyod kopartma (sputtering) sistemi
İyon Demeti kopartma (sputtering) Sistemi
Magnetron ve magnetron olmayan kopartma sistemleri arasındaki fark
Kullanılan gazlar
Uygulama alanları
Avantajları
Dezavantajları
Özet
Kaynaklar
Teşekkür

- by Tomi Laurila
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- Atomic Force Microscopy, Microelectronic, Thin Film, Nitrogen

Undoped and 2% Ga-doped ZnO films have been deposited by RF magnetron sputtering onto single crystal Si (1 0 0) substrates equivalent to the commercial Si solar cells. The same films were also grown on amorphous silica substrates to complete their characterization. The films have been characterized by X-ray diffraction, electrical and optical measurements, X-ray photoelectron spectroscopy, Raman microspectroscopy and scanning and high-resolution transmission electron microscopy. Films present a very good quality crystalline wurtzite structure with the c-axis perpendicular to the substrate, with continuity of the (0 0 0 2) planes along the whole film, as shown by transmission electron microscopy. The doped sample shows an increase of two orders of magnitude of the electrical conductivity, an optical transmittance bigger than 85% along the visible spectrum, a diminution of the grain size in the direction parallel to the substrate and a lower surface roughness. The Ga-cations act only as substitutional impurities, they are homogeneously distributed in the whole film, maintaining the wurtzite structure and increasing the carrier density. The formation of any spurious phase or segregation of Ga2O3 clusters that can act as carrier traps can be discarded. The characterization results allow us to conclude that the doped film has improved electrical and optical properties with respect to the undoped one. Therefore, the Ga-doped films are very suitable candidates as transparent conducting electrodes for solar cells, displays and other photoelectronic devices.High-resolution image of the interface between silicon substrate and the high-quality ZnO film. ► High quality ZnO and Ga:ZnO (2%at) films prepared by magnetron sputtering on Si (100) substrates. ► Both films show a continuity of the (0002) planes along the whole film. ► Ga cations act only as substitutional impurities, homogeneously distributed in the entire film. ► Ga-doping improves the electrical and optical properties of ZnO film.

- by Zouhair Sofiani
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- Zinc Oxide, Thin Film, Refractive Index, Optical Properties
- by Nguyen Tien Khoi A3K23
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- Engineering, Materials Science, Raman Spectroscopy, Thin Film
- by Xiaocheng Yang
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- Engineering, Applied Physics, Magnetic field, Zinc Oxide
- by Barbara Shrauner
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- Near Infrared, Infrared, Microstructures, Rf-Magnetron Sputtering
- by Korneli Grigorov and +1
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- Condensed Matter Physics, Quantum Physics, Surface Science, Optical Spectroscopy

In particular, the dye-sensitised solar cells
(DSSCs) have a high potential in the rational energy conversion
efficiency to secure our sustainable energy source.
In the present study, advanced radio frequency (RF) magnetron
sputtering technique was applied to incorporate
titanium dioxide (TiO2) dopants into reduced graphene
oxide (rGO) nanosheet for improving the power conversion
efficiency (PCE) of DSSCs device. An optimum TiO2
content incorporated onto rGO nanosheet plays an important
role in improving the PCE of DSSCs by minimising
the recombination losses of photo-induced charge carriers.
Based on the results obtained, 40-s sputtering duration for
incorporating TiO2 dopants onto rGO nanosheet exhibits a
maximum PCE of 8.78% than that of pure rGO film
(0.68%). In fact, the presence of optimum content of TiO2
dopants within rGO nanosheet could act as mediators for
efficient separation photo-induced charge carriers. However,
the excessive of sputtering duration (e.g. 60 s) of
TiO2 dopants onto rGO nanosheet results higher charge
recombination and lowers the PCE of DSSCs (5.39%).

- by Foo Wah Low
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- Dye Sensitized Solar Cells, Rf-Magnetron Sputtering, Reduced Graphene Oxide-TiO2 Nanocomposite
- by Lorenzo Malavasi
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- Inorganic Chemistry, Atomistic Simulation, Transport Properties, Computer Simulation
- by R. Mansano
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- Engineering, Materials Science, Materials, Activation Energy
- by Chetan Panchal
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- Materials Engineering, Heat Treatment, Thin Film, Radio Frequency
- by Abdul Faheem Khan
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- Engineering, Applied Physics, Atomic Force Microscopy, Multidisciplinary
- by Katerina Tsagaraki
- •
- Engineering, Technology, Zinc Oxide, Thin Film
- by Mukesh Kumar
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- Engineering, Technology, Thin Film, Physical sciences
- by Claudia Felser
- •
- Engineering, PHOTOELECTRON SPECTROSCOPY, Magnetic field, X Rays
- by Yung-eun Sung
- •
- Engineering, Physical sciences, CHEMICAL SCIENCES, Memory Effect
- by GUILLERMO VILLALOBOS
- •
- Engineering, Surface Roughness, Fluorescence Lifetime, Thin Film
- by Gunnar Niklasson
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- Engineering, Technology, Thin Film, Electrochromism
- by Joanny Fernandes
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- Titanium, Multidisciplinary, Thin Film, Room Temperature
- by Elangovan Elamurugu
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- Engineering, Solar Cell, Transparent Conducting Oxide Materials, Solar Energy
- by Viet Pham
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- Materials Engineering, Brain, Mathematical Sciences, Thin Film
- by Alvin Compaan
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- Engineering, Solar Cell, Solar Energy, Magnetron Sputtering
- by Raquel Barros
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- Engineering, Crystal structure, Physical sciences, Electrical Resistance
- by Abdul Qayyum Khan
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- Atomic Force Microscopy, Multidisciplinary, Thin Films, Thin Film
- by Joseph Simmons
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- Materials Engineering, Heat Treatment, Quantum Confinement, Non crystalline solids
- by Gerardo Camacho Vega
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- Engineering, Solar Cell, Transparent Conducting Oxide Materials, Solar Energy Materials
- by Js Tan
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- Engineering, Technology, Adhesion, Physical sciences

Ferroelectric SrBi2Ta2O9 (SBT) thin films have been deposited by the radio-frequency magnetron sputtering technique on bare p-Si as well as on HfO2 insulating buffer p-Si. XRD patterns revealed the formation of a well-crystallized SBT perovskite thin film on the HfO2 buffer layer. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) structure were characterized by varying thicknesses of the HfO2 layer. The MFIS structure exhibits a maximum clockwise C-V memory window of 1.60 V when the thickness of the HfO2 layer was 12 nm with a lower leakage current density of 6.20 × 10-7 A cm-2 at a positive applied voltage of 7 V. However, the memory window reaches a maximum value of 0.7 V at a bias voltage of ±5 and then decreases due to charge injection in the case of the insulating buffer layer thickness of 3 nm. The density of oxide trapped charges at/near the buffer layer-ferroelectric interface is studied by the voltage stress method. Capacitance-voltage (C-V) and leakage current density (J-V) characteristics of the Al/SBT/HfO2/Si(1 0 0) capacitor indicate that the introduction of the HfO2 buffer layer prevents interfacial diffusion between the SBT thin film and the Si substrate effectively and improves the interface quality. Furthermore, the Al/SBT/HfO2/Si structures exhibit excellent retention characteristics, the high and low capacitance values clearly distinguishable for over 1 h and 30 min. This shows that the proposed Al/SrBi2Ta2O9/HfO2/Si structure is ideally suitable for high performance ferroelectric memories.

- by anirban dhar
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- Engineering, Materials Engineering, Condensed Matter Physics, Technology
- by D. F Bogorin
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- Mathematical Physics, Condensed Matter Physics, Low Temperature Physics, Thin Film
- by Cristiana Grigorescu
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- Engineering, Technology, Physical sciences, Radio Frequency
- by Waheed Al-masry
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- Engineering, High Pressure, Scanning Electron Microscopy, Electron Diffraction
- by Raquel Barros
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- Engineering, Crystal structure, Copper, Thin Film
- by Lakshminarayan Nariangadu
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- Solar Cell, Mathematical Sciences, Thin Film, Physical sciences
- by Alexandra Gonçalves
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- Engineering, Technology, Zinc Oxide, Physical sciences
- by Suchitra Sen
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- Condensed Matter Physics, Quantum Physics, Scanning Electron Microscopy, Titanium
- by Rodrigo Martins
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- Production, Secondary Ion Mass Spectrometry, Zinc Oxide, Annealing
- by Mathias Schubert
- •
- Engineering, Applied Physics, Near Infrared, Atomic Force Microscopy
- by Alessandro Patelli
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- Mechanical Engineering, Surface Roughness, Thin Films, Ultraviolet
- by Korneli Grigorov and +1
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- Materials Engineering, Atomic Force Microscopy, Thin Film, Radio Frequency
- by Selvakumar N and +1
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- Engineering, Titanium, Heat Treatment, Copper